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US3398029A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making semiconductor devices by diffusing and forming an oxide

Assignee: Fujitsu Ltd
•
Filing: 1964-10-05
•
Granted: 1968-08-20
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Expires: 1984-10-05
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Abstract

No abstract record available.

Inventors

  • 👤 Yasufuku Matami
  • 👤 Kawamura Toyosaku
  • 👤 Hayashi Tsuneo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 10:32
CPC Classifications
C; C01; C01G; C01G9/00; C01G9/02; H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/043; Y10S148/102; Y10S148/116; Y10S148/117; Y10S148/118; Y10S438/00; Y10S438/91

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 76 words
THE METHOD OF PRODUCING A SILICON SEMICONDUCTOR DEVICE WHICH COMPRISES FORMING A SILICON DIOXIDE LAYER ON THE SURFACE OF A SILICON BODY WHILE DIFFUSING A DOPING IMPURITY INTO A PORTION OF SAID SILICON BODY, REMOVING THE SILICON-DIOXIDE LAYER AND THEREAFTER FORMING A NEW SILICONDIOXIDE LAYER AT A TEMPERATURE LESS THAN THAT TEMPERATURE AT WHICH THE DIFFUSION TOOK PLACE AND ADDING A SMALL AMOUNT OF DOPING MATERIAL INTO SAID SILICON DIOXIDE LAYER TO MINIMIZE SURFACE CHANNEL EFFECT.
Claim 2
Independent Claim 76 words
THE METHOD OF PRODUCING A SILICON SEMICONDUCTOR DEVICE WHICH COMPRISES FORMING A SILICON DIOXIDE LAYER ON THE SURFACE OF A SILICON BODY WHILE DIFFUSING A DOPING IMPURITY INTO A PORTION OF SAID SILICON BODY, REMOVING THE SILICON-DIOXIDE LAYER AND THEREAFTER FORMING A NEW SILICONDIOXIDE LAYER AT A TEMPERATURE LESS THAN THAT TEMPERATURE AT WHICH THE DIFFUSION TOOK PLACE AND ADDING A SMALL AMOUNT OF DOPING MATERIAL INTO SAID SILICON DIOXIDE LAYER TO MINIMIZE SURFACE CHANNEL EFFECT.

References Cited (Backward Citations)

US3122817A Cited
US2873222A Cited
US3156593A Cited
US3303069A Cited
US3255056A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-08-20 1972-02-19 1972-08-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-08-20 1976-02-19 1976-08-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-08-20 1980-02-19 1980-08-20 $7700.00 Window Closed / Lapsed

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