Patent US3537889A successfully refreshed from Google Patents.
US3537889A
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Low temperature formation of oxide layers on silicon elements of semiconductor devices
Assignee: General Electric Co
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Filing: 1968-10-31
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Granted: 1970-11-03
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Expires: 1988-10-31
Abstract
No abstract record available.
Inventors
- 👤 Edwin J Mets
- 👤 Ralph I Jurgensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:34
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10W74/10; H10W74/131; Y; Y10; Y10S; Y10S438/00; Y10S438/909; Y10T; Y10T428/00; Y10T428/22
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-11-02 | 1974-05-04 | 1974-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-11-02 | 1978-05-04 | 1978-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-11-02 | 1982-05-04 | 1982-11-03 | $7700.00 | Window Closed / Lapsed |