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US3564245A
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US
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Integrated circuit multicell p-n junction radiation detectors with diodes to reduce capacitance of networks
Assignee: Bulova Watch Co Inc
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Filing: 1968-01-24
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Granted: 1971-02-16
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Expires: 1988-01-24
Abstract
Abstract A multicellular, solid-state radiation detector assembly adapted to produce exceptionally large signals in response to incident radiation, the detector being constituted by an array of individual surface-barrier or diffused-junction, radiationsensitive, semiconductive cells, each of which has a small area and a low internal capacitance. The cells in the array are unidirectionally connected in parallel relation with respect to current flow, but are otherwise electrically isolated from each other, whereby the overall capacitance of the array is low while the detection efficiency thereof is substantially equal to a unitary radiation detector whose surface area is equivalent to the aggregate area of the cells, the signal output from the multicellular detector being far greater than that yielded by the unitary detector.
Inventors
- 👤 Dale R Koehler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:33
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; G; G01; G01T; G01T1/00; G01T1/02; G01T1/026; G04; G04C; G04C10/00; G04C10/02; G04F; G04F5/00; G04F5/16; G21; G21G; G21G4/00; G21G4/04; H10F39/107; H10F99/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
16 words
An assembly as set forth in claim 1, wherein said cells are of the surface-barrier type.
Claim 2
Dependent Claim
16 words
An assembly as set forth in claim 1, wherein said cells are of the diffused-junction type.
Claim 3
Dependent Claim
48 words
An assembly as set forth in claim 1, wherein said cells are disposed in a planar array and have a net detection efficiency substantially equal to that of a unitary detector of the same material whose surface area is equivalent to the aggregate surface areas of the cells.
Claim 4
Dependent Claim
17 words
An assembly as set forth in claim 1, wherein said unidirectional elements are constituted by N-P diodes.
Claim 5
Dependent Claim
22 words
An assembly as set forth in claim 1, wherein said cells are exposed to radiation and said unidirectional elements are shielded therefrom.
Claim 6
Dependent Claim
91 words
A microcircuit layout for a multicellular solid-state nuclear radiation detector assembly, said layout comprising: a. a P-Type base layer; b. an array of relatively small N-type areas diffused into said base layer to form therewith a plurality of electrically isolated semiconductive radiation-sensitive cells, each having a separate depletion region which is spaced from the regions of adjacent cells; and c. a still smaller P-type zone diffused into each of said N-type areas to form a diode therewith, said N-type area serving as a common junction for said cell and said diode.
Claim 7
Dependent Claim
17 words
A layout as set forth in claim 7, wherein said P-type base layer is a silicon wafer.
Claim 8
Dependent Claim
21 words
A layout as set forth in claim 7, wherein the surface of the structure is coated with a protective oxide layer.
Claim 9
Dependent Claim
31 words
A layer as set forth in claim 9, further including a terminal contact penetrating said oxide layer and engaging said zone, said contact having an enlarged head to shield said zone.
Claim 10
Dependent Claim
91 words
A microcircuit layout for a multicellular solid-state nuclear radiation detector assembly, said layout comprising: a. an N-type base layer; b. an array of relatively small P-type areas diffused into said base layer to form therewith a plurality of electrically isolated semiconductive radiation-sensitive cells, each having a separate depletion region which is spaced from the regions of adjacent cells; and c. a still smaller N-type zone diffused into each of said P-type areas to form a diode therewith, said P-type area serving as a common junction for said cell and said diode.
Claim 11
Dependent Claim
33 words
A detector assembly as set forth in claim 1, wherein said unidirectional elements are constituted by diodes each having an internal capacitance which is relatively small compared to that of said semiconductor cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-15 | 1974-08-17 | 1975-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-15 | 1978-08-17 | 1979-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-15 | 1982-08-17 | 1983-02-16 | $7700.00 | Window Closed / Lapsed |