Abstract A transistor wherein the collector contact of a platelike semiconductor of silicon is soldered to a metallic base and wherein the base carries two insulated terminals for coiled first end portions of two wirelike leads whose second end portions are soldered to the base and emitter contacts on the exposed surface of the semiconductor. The second end portion of the leads are parallel to the axes of coiled end portions and the internal diameters of such coiled end portions exceed the diameters of corresponding terminals. The connections between the terminals and the coiled end portions are established by solder which is applied over the coiled end portions in the form of annuli and melts while the parts of the transistor are conveyed through a soldering furnace. During such transport, the second end portions penetrate into soft solder of the base and emitter contacts, and the collector contact of the semiconductor is simultaneously soldered to the metallic base.
A semiconductor device as defined in claim 1, wherein the conductivity of said semiconductor in the region of said first surface is opposite that in the region of said second surface.
Claim 2
Dependent Claim
14 words
A semiconductor device as defined in claim 1, wherein said semiconductor consists of silicon.
Claim 3
Dependent Claim
29 words
A semiconductor device as defined in claim 1, wherein said lead further comprises an intermediate portion which extends substantially at right angles to the axis of said coiled portion.
Claim 4
Dependent Claim
18 words
A semiconductor device as defined in claim 1, further comprising insulator means between said terminal and said base.
Claim 5
Dependent Claim
22 words
A semiconductor device as defined in claim 1, wherein the internal diameter of said coiled portion exceeds the diameter of said terminal.
Claim 6
Dependent Claim
38 words
A semiconductor device as defined in claim 1, wherein said lead is substantially U-shaped and further comprises an intermediate portion which is substantially normal to the axis of said coiled end portion and extends between said end portions.
Claim 7
Dependent Claim
33 words
A semiconductor device as defined in claim 1, wherein said lead further comprises an intermediate portion between said end portions and wherein said end portions extend from opposite sides of said intermediate portion.
Claim 8
Dependent Claim
53 words
A semiconductor device as defined in claim 1, wherein said layer, said contact and said connection consist of lead-tin solder with a melting point above 280* C. and wherein the melting point of the solder of said connection is lower than the melting point of the solder of said contact and said layer.
Claim 9
Dependent Claim
67 words
A semiconductor device as defined in claim 1, wherein the solder of said connector is or at least substantially eutectic alloy selected from the group consisting of a. 96 percent by weight of Sn and 4 percent by weight of Ag. b. 96 percent by weight of Sn, 4 percent by weight of Ag and at least one-tenth of one percent by weight of Bi or Sb.