Semiconductor wafer processing

Claim 2

The processing system as set forth in in claim 2 wherein said restricted clearance is approximately 1 millimeter in width.

Claim 3

The processing system as set forth in claim 1 wherein said carriers comprise a number of linked susceptors.

Claim 4

The processing system as set forth in claim 4 wherein each said recess adapted to support a workpiece comprises a a circular recess having the end wall thereof inclined toward the center of the susceptor whereby to hold said workpiece.

Claim 5

In a processing system for continuous processing of workpieces transported in a substantial tier therethrough between two isolated distinct atmospheres at a distinct pressure relative to ambient pressure, at least one continuously purged isolation chamber connected with said atmospheres and comprising: a. spaced end walls defining said chamber and having openings for transport of said tier of workpieces therethrough from one of said atmospheres to the other with said openings having a cross section complementary to the cross section of said tier forming a restricted clearance therebetween of approximately 1 millimeter, said restricted clearance being sufficient to provide a pressure gradient between said atmospheres and the atmosphere contained within said continuously purged isolation chamber; b. a vertically arranged gas inlet and an opposed gas outlet disposed in substantially the plane of tier movement to provide laminar flow between said inlet and outlet transverse to the direction of tier movement; c. means for insuring the flow of nondeleterious atmosphere across said isolation chamber and transverse to the direction of movement of said workpieces whereby said streamlined nondeleterious atmosphere flow and leakage of said distinct atmospheres through said restricted clearance forms at least one dynamic seal to effect isolation of said distinct atmospheres, and d. a number of linked, vertIcally extending, planar graphite susceptors, the top portion of each susceptor facing said gas inlet and being of a shape to provide a streamlined flow of said atmosphere contained in said continuously purged isolation chamber over each side of said susceptor, the sides of each susceptor having a number of circular recesses therein, the end wall of said recesses being inclined toward the center of said susceptor to hold said workpieces, and a quartz track passing through said isolated distinct atmospheres and said purged isolation chamber, to support and guide said tier.