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US3607240A Expired / Lapsed US ⏱️ 0.0 years remaining

Solder for contacting a semiconductor body and method for its production

Assignee: Siemens AG
•
Filing: 1969-07-23
•
Granted: 1971-09-21
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Expires: 1989-07-23
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Abstract

Abstract A solder for contacting a semiconductor body with a contact piece, whereby silicon constitutes an alloying component of the semiconductor body. The solder composition is: Pdx ((MeIyMeII1 y)z Si1 z)1 x WITH 0.25 X 0.60 0.20 Y 0.90 0.05 Z 0.35 WHEREIN MeI is molybdenum or tungsten and MeII is iron, nickel, or cobalt.

Inventors

  • 👤 Alfred Kunert
  • 👤 Gerhard Oesterhelt

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 22:34
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/32; B23K35/322

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 30 words
The solder of claim 1, wherein the mixing ratio of the solder components MeI and MeII corresponds, at least approximately, to an eutectic or dystectic point of the melt diagram.
Claim 2
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.3 ((Mo0.37 Fe0.63)0.1 Si0.9)0.7 .
Claim 3
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.38 ((W0.46 Co0.54)0.1 Si0.9)0.62 .
Claim 4
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.44 ((W0.6 Co0.4)0.12 Si0.88)0.56 .
Claim 5
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.55 ((W0.75 Co0.25)0.2 Si0.8)0.45 .
Claim 6
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.38 ((W0.5 Ni0.5)0.1 Si0.9)0.62 .
Claim 7
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.38 ((Mo0.46 Co0.54)0.1 Si0.9)0.62 .
Claim 8
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.44 ((Mo0.6 Co0.4)0.1 Si0.9)0.56 .
Claim 9
Dependent Claim 23 words
The solder of claim 2, whereby the solder used to contact a GeSi semiconductor body, has the composition: Pd0.35 ((Mo0.75 Co0.25)0.18 Si0.82)0.65 .
Claim 10
Dependent Claim 23 words
The solder of claim 2, whereby tHe solder used to contact a GeSi semiconductor body, has the composition: Pd0.3 ((Mo0.67 Ni0.33)0.13 Si0.87)0.7 .
Claim 11
Dependent Claim 50 words
The method of producing a solder of claim 1 which comprises melting together the metals MeI and MeII in an appropriate mixing ratio, subsequently melting the dimetal alloy and silicon, at least once, in an appropriate mixing ratio and during the last melting process adding the respective share of palladium.
Claim 12
Dependent Claim 44 words
The method of claim 12, wherein the dimetal alloy and the silicon are placed into a perpendicularly positioned melting tube, which is sealed at the bottom, and inductively melted with a high frequency field and the melting tube is rotated around the tubular axis.
Claim 13
Dependent Claim 29 words
The method of claim 13, wherein during the solidification of the melt, the melting tube is lowered from the high frequency field, in the direction of the tubular axis.
Claim 14
Dependent Claim 46 words
The method of claim 12, wherein the dimetal alloy and silicon and the palladium are placed into a perpendicularly positioned melting tube, which is sealed at the bottom, and inductively melted with a high frequency field and the melting tube is rotated around the tubular axis.
Claim 15
Dependent Claim 29 words
The method of claim 15, wherein during the solidification of the melt, the melting tube is lowered from the high frequency field, in the direction of the tubular axis.

References Cited (Backward Citations)

GB193050A Cited
US1647301A Cited
US2900251A Cited
US3070875A Cited
US3220828A Cited
US3297436A Cited
US3470033A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-09-20 1975-03-22 1975-09-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-09-20 1979-03-22 1979-09-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-09-20 1983-03-22 1983-09-21 $7700.00 Window Closed / Lapsed

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