Patent US3617829A successfully refreshed from Google Patents.
US3617829A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation-insensitive voltage standard means
Assignee: Motorola Solutions Inc
•
Filing: 1969-12-01
•
Granted: 1971-11-02
•
Expires: 1989-12-01
Abstract
Abstract A diode which is used as the forward-biased element of a pair of series-connected diodes comprising a zero temperature coefficient voltage standard means is hardened against irradiation by neutrons. The diode can take one of several forms. These forms include diodes having thin bases and high recombination surfaces, transistors each having a plurality of collectors, each shorted to the base thereof four-layer semiconductor elements in which the middle two layers are very thin. In each case, the excess number of minority carriers is kept constant for a given current through the forward-biased element, resulting in an unchanged voltage drop at a given current after neutron irradiation.
Inventors
- 👤 Israel Arnold Lesk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:53
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/18; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
101 words
A radiation-hardened diode comprising at least a layer of Ptype semiconductor material in contact with a layer of N-type semiconductor material whereby a PN junction is provided, and means for causing the excess of minority carriers in said diode to be constant over a useful range of current flow through said diode upon forward biasing of said diode wherein one of said layers has a thickness of about one diffusion length in the material of said one layer upon radiation thereof, and in which a high recombination surface is provided for the side of the layer away from said PN junction.
Claim 2
Dependent Claim
101 words
A radiation-hardened diode comprising at least a layer of Ptype semiconductor material in contact with a layer of N-type semiconductor material whereby a PN junction is provided, and means for causing the excess of minority carriers in said diode to be constant over a useful range of current flow through said diode upon forward biasing of said diode wherein one of said layers has a thickness of about one diffusion length in the material of said one layer upon radiation thereof, and in which a high recombination surface is provided for the side of the layer away from said PN junction.
Claim 3
Dependent Claim
59 words
The invention of claim 1 in which one of said layers includes at least one island of material of opposite conductivity type embedded therein and exposed on the side of said one layer way from said PN junction and a short circuiting electrode in contact with said side of said one layer and also in contact with said island.
Claim 4
Dependent Claim
27 words
The invention of claim 2 in which a plurality of islands is provided in said one layer, said electrode being in contact with all of said islands.
Claim 5
Dependent Claim
86 words
The invention of claim 1 in which one of said layers has a thickness of one diffusion length for minority carriers and in which a third layer of opposite conductivity type to said one layer is in contact with the side of said one layer opposite said PN junction, said third layer also having a thickness of one diffusion length and in which a fourth layer is in contact with said third layer, said fourth layer being of the same conductivity type as said one layer.
Claim 6
Dependent Claim
148 words
A radiation-insensitive, zero temperature coefficient, voltage standard device comprising a first diode, a second diode, a resistor, means for connecting said diodes and said resistor in series with a source of voltage with one of said diodes reverse biased and the other of said diodes forwardly biased, said forwardly biased diode comprising at least two layers of opposite conductivity types having one side of each of said layers in contact to thereby provide a PN junction, said forwardly biased diode including means to cause the excess of minority carriers in said diode to be constant over a useful range of current flow through said diode wherein one of said layers has a thickness of about one diffusion length in the material of said one layer upon radiation thereof, and in which a high recombination surface is provided for the side of the layer away from said PN junction.
Claim 7
Dependent Claim
148 words
A radiation-insensitive, zero temperature coefficient, voltage standard device comprising a first diode, a second diode, a resistor, means for connecting said diodes and said resistor in series with a source of voltage with one of said diodes reverse biased and the other of said diodes forwardly biased, said forwardly biased diode comprising at least two layers of opposite conductivity types having one side of each of said layers in contact to thereby provide a PN junction, said forwardly biased diode including means to cause the excess of minority carriers in said diode to be constant over a useful range of current flow through said diode wherein one of said layers has a thickness of about one diffusion length in the material of said one layer upon radiation thereof, and in which a high recombination surface is provided for the side of the layer away from said PN junction.
Claim 8
Dependent Claim
59 words
The invention of claim 5 in which one of said layers includes at least one island of material of opposite conductivity type embedded therein and exposed on the side of said one layer away from said PN junction and a short circuiting electrode in contact with said side of said one layer and also in contact with said island.
Claim 9
Dependent Claim
27 words
The invention of claim 6 in which a plurality of islands is provided in said one layer, said electrode being in contact with all of said islands.
Claim 10
Dependent Claim
86 words
The invention of claim 5 in which one of said layers has a thickness of one diffusion length for minority carriers and in which a third layer of opposite conductivity type to said one layer is in contact with the side of said one layer opposite said PN junction said third layer also having a thickness of one diffusion length and in which a fourth layer is in contact with said third layer, said fourth layer being of the same conductivity type as said one layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-01 | 1975-05-03 | 1975-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-01 | 1979-05-03 | 1979-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-01 | 1983-05-03 | 1983-11-02 | $7700.00 | Window Closed / Lapsed |