Fabrication of integrated semiconductor devices by electrochemical etching

Abstract

Abstract Grid-like zones of P or N type high conductivity material are formed in the surface of an N type higher resistivity epitaxially deposited layer on a high conductivity substrate of a body of silicon semiconductor material. The surface of the N type layer then is covered with a dielectric film of silicon nitride and a support layer of polycrystalline silicon. The body then is immersed in a suitable bath and subjected to an electrochemical etch which removes the high conductivity substrate and, in line with the grid-like zones, channels are etched through the N type layer and the grid-like zones, leaving completely isolated blocks of the N type layer affixed to a common support member. Following such shaping of isolated blocks of the N type layer integrated circuits are fabricated by applying insulating films over the exposed surface of the block and otherwise carrying out wellknown EPIC-type fabrication procedures.

Inventors

• 👤 Ronald Lee Meek

Bibliographic Details