US3669769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for minimizing autodoping in epitaxial deposition
Assignee: International Business Machines Corp
•
Filing: 1970-09-29
•
Granted: 1972-06-13
•
Expires: 1990-09-29
Abstract
Abstract AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.
Inventors
- 👤 Angelo V Badami
- 👤 Ekkehard Ebert
- 👤 Bernard M Kemlage
- 👤 Karl E Kroell
- 👤 H Bernhard Pogge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:52
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; C30B29/08; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P32/00; H10P32/10; H10P32/15; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/037; Y10S148/145; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |