Method for minimizing autodoping in epitaxial deposition

Abstract

Abstract AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.

Inventors

• 👤 Angelo V Badami
• 👤 Ekkehard Ebert
• 👤 Bernard M Kemlage
• 👤 Karl E Kroell
• 👤 H Bernhard Pogge

Bibliographic Details