Method of forming the electrode of a semiconductor device
Abstract
Abstract IN FORMING AN ELECTRODE IN A SEMICONDUCTOR DEVICE, AN ALUMINIUM LAYER IS THINLY DEPOSITED ON THE WHOLE SURFACE OF A FILM OF SEMICONDUCTOR OXIDE SUCH AS SILICON OXIDE COVERING A MAJOR SURFACE OF A SEMICONDUCTOR SUBSTRATE AND ON A PORTION OF THE MAJOR SURFACE EXPOSED IN A HOLE FORMED IN THE FILM, THE COMBINATION THUS OBTAINED IS HEATED SO THAT THE PORTION OF THE ALUMINIUM LAYER DEPOSITED IN THE HOLE IS ALLOYED WITH THE SEMICONDUCTOR AND SO THAT THE PORTION OF THE ALUMINIUM LAYER ON THE FILM IS OXIDIZED BY THE REACTION WITH THE SEMICONDUCTOR OXIDE, THEN AN ELECTRODE METAL IS DEPOSITED ON THE ALLOY REGION THUS OBTAINED. THE LYAER OF THE OXIDIZED ALUMINIUM, THAT IS, ALUMINA IS USED AS A PASSIVATION FILM.
Inventors
- 👤 Kogo Sato
- 👤 Hiroshi Kato
- 👤 Shinji Ohnishi
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-27 | 1975-12-27 | 1976-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-27 | 1979-12-27 | 1980-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-27 | 1983-12-27 | 1984-06-27 | $7700.00 | Window Closed / Lapsed |