Patent US3676922A successfully refreshed from Google Patents.
US3676922A
Expired / Lapsed
US
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Method of fabricating a semiconductor device
Assignee: TDK Micronas GmbH
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Filing: 1970-02-13
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Granted: 1972-07-18
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Expires: 1990-02-13
Abstract
Abstract This is a method of forming interconnection leads between connecting pads on an integrated circuit chip and corresponding external conductors for the device. This is accomplished by placing a conductive metal sheet over the chip and surrounding external lead portions in such a manner as to visibly locate each connecting pad and external lead; then each portion of the overlying conductive sheet is bounded to each underlying connecting pad and external lead; the desired interconnection pattern between each of the connecting pads and each of the external leads is formed on the conductive sheet; and portions of the conductive sheet are then removed thus leaving the desired interconnection leads.
Inventors
- 👤 Charles R Cook Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:11
CPC Classifications
H; H10; H10W; H10W99/00; H10W70/00; H10W70/40; H10W70/479; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T29/49124; Y10T29/4913; Y10T29/49133; Y10T29/49135; Y10T29/49146
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
127 words
A method of fabricating a semiconductor device comprising the steps of: placing a semiconductor die on the surface of a substrate, said die having a plurality of connecting pads adjacent the periphery of said die; placing a plurality of external lead conductors on said substrate, each of said external leads located near a selected one of said connecting pads; applying a conductive sheet over said die and said substrate in such a manner as to visibly locate each connecting pad and external lead; bonding each portion of said overlying conductive sheet to each underlying connecting pad and external lead; removing portions of said conductive sheet necessary to establish an interconnection pattern between each of said connecting pads and each of said external leads; and encapsulating said device.
Claim 2
Independent Claim
127 words
A method of fabricating a semiconductor device comprising the steps of: placing a semiconductor die on the surface of a substrate, said die having a plurality of connecting pads adjacent the periphery of said die; placing a plurality of external lead conductors on said substrate, each of said external leads located near a selected one of said connecting pads; applying a conductive sheet over said die and said substrate in such a manner as to visibly locate each connecting pad and external lead; bonding each portion of said overlying conductive sheet to each underlying connecting pad and external lead; removing portions of said conductive sheet necessary to establish an interconnection pattern between each of said connecting pads and each of said external leads; and encapsulating said device.
Claim 3
Dependent Claim
28 words
A method of fabricating a semiconductor device according to claim 1 wherein said conductive sheet is comprised of aluminum having a thickness ranging from 0.5 to 10 mils.
Claim 4
Dependent Claim
18 words
A method of fabricating a semiconductor device according to claim 1 wherein said substrate is comprised of glass.
Claim 5
Dependent Claim
81 words
A method of fabricating a semiconductor device according to claim 1 wherein said interconnection pattern is established by the further steps of: applying a layer of photoresist over said conductive sheet; placing a master mask adjacent the surface of said conductive sheet, said mask exposing said conductive sheet in accordance with said interconnection pattern; exposing said conductive sheet to ultraviolet light in accordance with said interconnection pattern; and removing that portion of said photoresist layer not exposed to said ultraviolet light.
Claim 6
Dependent Claim
30 words
A method of fabricating a semiconductor device according to claim 4 wherein said that portion of said conductive sheet is removed by spray etching said sheet with an etchant solution.
Claim 7
Dependent Claim
40 words
A method of fabricating a semiconductor device according to claim 1 wherein said plurality of external lead conductors are attached to a metal frame, and said metal frame is severed from saiD external lead conductors subsequently to said bonding step.
References Cited (Backward Citations)
US3341649A
Cited
US3374537A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-18 | 1976-01-17 | 1976-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-18 | 1980-01-17 | 1980-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-18 | 1984-01-17 | 1984-07-18 | $7700.00 | Window Closed / Lapsed |