Patent US3677837A successfully refreshed from Google Patents.
US3677837A
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US
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Method of making pedestal transistor having minimal side injection
Assignee: International Business Machines Corp
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Filing: 1969-08-06
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Granted: 1972-07-18
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Expires: 1989-08-06
Abstract
Abstract A HIGH PERFORMANCE TRANSISTOR FORMED IN A MONOLITHIC SEMICONDUCTOR BODY WITH A PROJECTING PEDESTAL PORTION, AN EMITTER REGION IN THE UPPER PORTION OF THE PEDESTAL WITH THE EMITTER BASE JUNCTION TERMINATING AT THE PERIPHERY OF THE PEDESTAL.
Inventors
- 👤 Kanu G Ashar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:25
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D99/00; H10P; H10P95/00; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/043; Y10S148/049; Y10S148/085; Y10S148/114; Y10S148/117
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-18 | 1976-01-17 | 1976-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-18 | 1980-01-17 | 1980-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-18 | 1984-01-17 | 1984-07-18 | $7700.00 | Window Closed / Lapsed |