Patent US3684902A successfully refreshed from Google Patents.
US3684902A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switch device
Assignee: Westinghouse Electric Corp
•
Filing: 1966-06-07
•
Granted: 1972-08-15
•
Expires: 1986-06-07
Abstract
Abstract A switching device is provided in a semiconductor structure including a first region with three regions in rectifying contact therewith and, additionally, an ohmic contact thereon. Two of the rectifying contacts are symmetrically disposed with respect to the third and to the ohmic contact on the first region to provide the equivalent of two matched transistors having common emitter and base regions. The ohmic contact on the first region may, for example, be located between or extend around the two symmetrically disposed rectifying contacts, or have an ''''E'''' or ''''H'''' shape, or it may extend around the third rectifying contact. When a switching signal is applied across the ohmic contact on the first region and the third rectifying contact a low impedance path is provided between the other two rectifying contacts.
Inventors
- 👤 Michael N Giuliano
- 👤 Elwood W Goins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:48
CPC Classifications
H; H10; H10D; H10D88/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
187 words
A semiconductor switch comprising a semiconductor body including first and second regions of opposite conductivity type separated by a p-n junction, a first ohmic contact on said first region, a second ohmic contact on said second region, said first and second contacts are separated by the combined thickness of said first and second region and said p-n junction and are substantially coaxial, first and second zones located in said second region and each being of opposite conductivity type to that of said second region, discrete ohmic contacts on said first and second zones, respectively, first biasing means connected to said discrete ohmic contacts and applying an input signal thereto to create a first current path solely within said second region between said discrete ohmic contacts, and second biasing means connected across said first and second ohmic contacts to create a second current path across said p-n junction between said first and second ohmic contacts to intersect substantially at right angles said first current path to switch the impedance of said first current path between high and low impedance states by changing the bias across said p-n junction.
Claim 2
Dependent Claim
187 words
A semiconductor switch comprising a semiconductor body including first and second regions of opposite conductivity type separated by a p-n junction, a first ohmic contact on said first region, a second ohmic contact on said second region, said first and second contacts are separated by the combined thickness of said first and second region and said p-n junction and are substantially coaxial, first and second zones located in said second region and each being of opposite conductivity type to that of said second region, discrete ohmic contacts on said first and second zones, respectively, first biasing means connected to said discrete ohmic contacts and applying an input signal thereto to create a first current path solely within said second region between said discrete ohmic contacts, and second biasing means connected across said first and second ohmic contacts to create a second current path across said p-n junction between said first and second ohmic contacts to intersect substantially at right angles said first current path to switch the impedance of said first current path between high and low impedance states by changing the bias across said p-n junction.
Claim 3
Dependent Claim
31 words
A semiconductor switch as set forth in claim 1 wherein said first and second zones are on opposite sides of said second ohmic contact and spaced substantially the same distance therefrom.
References Cited (Backward Citations)
US3237018A
Cited
US3241013A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-15 | 1976-02-14 | 1976-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-15 | 1980-02-14 | 1980-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-15 | 1984-02-14 | 1984-08-15 | $7700.00 | Window Closed / Lapsed |