Semiconductor structure incorporating tunnel diodes located in the path of the main current flow

Claim 1

A semiconductor element having the function of a transistor and having a plurality of contacting layers alternating with respect to their respective types of conductivity comprising a first metallic layer serving as a contact electrode and as the emitter terminal of the transistor, a second highly doped n layer adjacent said first layer forming the cathode of a first tunnel diode located in the path of the main current flow through the transistor, a third highly doped p -layer adjacent said second layer forming the anode of said first tunnel diode and which functions simultaneously as the anode of a second tunnel diode likewise located in the path of the main current flow through the transistor, a fourth highly doped n -layer adjacent said third layer forming the cathode of said second tunnel diode and which functions simultaneously as the emitter of the transistor having a n -p-i-n structure, a fifth p-layer adjacent said fourth layer and which forms the base of the transistor, a sixth intrinsic layer adjacent said fifth layer, a seventh nlayer adjacent said sixth layer which functions as the collector of the transistor, and an eighth metallic layer adjacent said seventh layer which functions as a contact electrode and as the collector terminal for the transistor.