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US3754988A
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Quantum state memory
Assignee: PATENT TECHNOLOGY INT Inc
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Filing: 1970-11-20
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Granted: 1973-08-28
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Expires: 1990-11-20
Abstract
Abstract A quantum state memory is described made up of a matrix suitable for conducting electromagnetic radiation along the paths of the matrix to the intersecting points. A suitable material is located at the intersecting points characterized by two quantum states which may be generated by atoms, molecules, or ions in liquids, solids, or gases. The switching between the quantum states is accomplished by subjecting the material at the intersecting points to electromagnetic radiation at two frequencies, in one case, and at a single frequency in the opposite case. Detection means are provided to determine the quantum state.
Inventors
- 👤 F Barnes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:57
CPC Classifications
G; G02; G02F; G02F2/00; G02F2/02; Y; Y10; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052; Y10T156/1056; Y10T156/1057; Y10T29/00; Y10T29/49; Y10T29/49002
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
22 words
The process of claim 1 wherein holes are formed in the film at the intersecting points to receive said material place thereat.
Claim 2
Dependent Claim
35 words
The process of claim 1 wherein an isolating layer is placed over the matrix, and then a second thin film is deposited on the isolating layer and the process repeated to form a second matrix.
Claim 3
Dependent Claim
23 words
The process of claim 3 wherein the steps are successively repeated to build up a three-dimensional array containing a plurality of isolated matrices.
Claim 4
Dependent Claim
21 words
The process of claim 1 wherein source and detecting elements are formed in situ on the substrate integral with the matrix.
Claim 5
Dependent Claim
60 words
The process of claim 1 wherein the substrate is selected from the class consisting of glass and ceramic, titanium is desposited on the substrate as a thin film and is subsequently oxidized to form titanium dioxide, the portions of the film are removed by photoetching techniques to develop the matrix, and holes are etched at the intersections of the matrix.
Claim 6
Dependent Claim
18 words
The process of claim 6 wherein the titanium is deposited on the substrate by vapor phase crystal growth.
Claim 7
Dependent Claim
27 words
The process of claim 6 wherein the titanium is vacuum deposited through a mask to form the matrix without photoecthing to remove portions of the deposited film.
Claim 8
Dependent Claim
86 words
A process of making a quantum state memory comprising arranging two bundles of optical fibers in a grid pattern, fusing the fibers at their intersecting points, forming a hole at the intersecting points of said fibers, and locating in said hole in a position to intercept electromagnetic radiation being conducted by said fibers a material characterized by two quantum states at different energy levels, said material being sensitive on exposure to preselected electromagnetic radiation to be driven from one of said quantum states to the other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |