Abstract A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium arsenide containing a relatively high concentration of aluminum. The aluminum gallium arsenide layer has therein a desired conductivity modifier. The coated body is heated to diffuse the conductivity modifier from the layer into the body to form a region of a desired conductivity along the surface of the body. At least a portion of the layer is etched away with an etchant which does not attack the material of the body, such as boiling hydrochloric acid, to expose at least a portion of the surface of the body.
The method of claim 1 whrein the layer is epitaxially deposited on the surface of the body.
Claim 2
Dependent Claim
24 words
The method of claim 2 wherein the layer is epitaxially deposited on the surface of the body by the technique of liquid phase epitaxy.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the material of the layer is single crystalline aluminum gallium arsenide.
Claim 4
Dependent Claim
33 words
The method of claim 4 wherein the material of the body is gallium arsenide or aluminum gallium arsenide having a concentration of aluminum substantially less than the concentration of aluminum in the layer.
Claim 5
Dependent Claim
13 words
The method of claim 5 wherein the layer is etched with hydrochloric acid.