Patent US3878554A successfully refreshed from Google Patents.
US3878554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1973-08-27
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Granted: 1975-04-15
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Expires: 1993-08-27
Abstract
Abstract A semiconductor device wherein a beam lead connected to each wiring layer is all formed on a silicon nitride film of a semiconductor wafer surface in a semiconductor device having a multilayer wiring structure on a semiconductor basic board.
Inventors
- 👤 Koichi Mikome
- 👤 Yoshihiro Matsuda
- 👤 Yoshiyuki Namiki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:46
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/60
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
109 words
A semiconductor device comprising a first insulating film covering a surface of a semiconductor substrate; a second insulating film covering the first insulating film; an electrode window penetrating the first and second insulating films to expose a surface region of the semiconductor substrate; a first wiring layer extending from the semiconductor substrate through the electrode window and disposed on the second insulating film; a third insulating film disposed on the first wiring layer; a second wiring layer disposed on the third insulating film and extending onto the second insulating film; and a beam lead electrode disposed on the second insulating film and electrically connected to the first wiring layer.
Claim 2
Dependent Claim
109 words
A semiconductor device comprising a first insulating film covering a surface of a semiconductor substrate; a second insulating film covering the first insulating film; an electrode window penetrating the first and second insulating films to expose a surface region of the semiconductor substrate; a first wiring layer extending from the semiconductor substrate through the electrode window and disposed on the second insulating film; a third insulating film disposed on the first wiring layer; a second wiring layer disposed on the third insulating film and extending onto the second insulating film; and a beam lead electrode disposed on the second insulating film and electrically connected to the first wiring layer.
Claim 3
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein the first insulating film comprises silicon dioxide, the second insulating film comprises silicon nitride and the third insulating film comprises phosphorus silicate glass.
Claim 4
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein a wiring pattern for leading out is formed where the beam lead connected to the first wiring layer is led out and formed.
Claim 5
Dependent Claim
32 words
A semiconductor device as claimed in claim 3, wherein the wiring pattern for leading out consists of the same material as the first wiring layer and is formed on the same plane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-14 | 1978-10-14 | 1979-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-14 | 1982-10-14 | 1983-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-14 | 1986-10-14 | 1987-04-15 | $7700.00 | Window Closed / Lapsed |