Patent US3879744A successfully refreshed from Google Patents.
US3879744A
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Bidirectional thyristor
Assignee: Silec Semi Conducteurs SA
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Filing: 1973-11-27
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Granted: 1975-04-22
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Expires: 1993-11-27
Abstract
Abstract A gate controlled bi-directional semi-conductor device is described as comprising a first gate controlled bidirectional thyristor of pre-determined switching sensitivity and having first and second current carrying electrodes and a gate control electrode, a second gate controlled bidirectional semi-conductor switching device of relatively less switching sensitivity and having first and second current carrying electrodes and a gate control electrode, a means coupling a first current carrying electrode of said first device through said gate electrode of said second device for controlling the switching of said second device, and a means coupling the second electrode of said first device with the second electrode of said second device whereby upon the application of an operating potential between the first and second electrodes of said second device a current, which is to be controlled, flows initially in said first device and provides a gate controlled current which causes the switching of said second device into conduction.
Inventors
- 👤 Guy H Dumas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:42
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
25 words
said first ohmic contact consisting of metallization over said entire second surface, said first ohmic contact forming one of said first and second main electrodes,
Claim 2
Dependent Claim
25 words
said first ohmic contact consisting of metallization over said entire second surface, said first ohmic contact forming one of said first and second main electrodes,
Claim 3
Dependent Claim
42 words
said fourth n -type layer having a substantially semi-circular shape defined by two semi-circles of said first and second radii, said fourth n -type layer being situated on the other side only of said diametrical plane opposite said first n -layer, and
Claim 4
Dependent Claim
42 words
said fourth n -type layer having a substantially semi-circular shape defined by two semi-circles of said first and second radii, said fourth n -type layer being situated on the other side only of said diametrical plane opposite said first n -layer, and
Claim 5
Dependent Claim
52 words
said first n -type layer having a substantially semi-circular shape defined by two semi-circles of first and second radii, where said first radius is greater than said second radius, said first n -type diffused layer bEing situated on one side only of a diametrical plane perpendicular to said first and second surfaces,
Claim 6
Dependent Claim
52 words
said first n -type layer having a substantially semi-circular shape defined by two semi-circles of first and second radii, where said first radius is greater than said second radius, said first n -type diffused layer bEing situated on one side only of a diametrical plane perpendicular to said first and second surfaces,
Claim 7
Dependent Claim
113 words
In a bi-directional gate controlled semiconductor device of the type having first and second main electrodes and a gate electrode and comprised of a single semi-conductor body having a geometrical axis of symmetry and first and second parallel surfaces perpendicular to said axis of symmetry, said semi-conductor body including an n-type inner layer between first and second p-type outer layers defining said first and second surfaces, respectively, and forming first and second p-n junctions, respectively, with said n-type inner layer, the improvement comprising: a. first, second and third separate n -type diffused layers on said first p-type outer layer forming third, fourth and fifth p-n junctions, respectively, with said first p-type outer layer,
Claim 8
Dependent Claim
113 words
In a bi-directional gate controlled semiconductor device of the type having first and second main electrodes and a gate electrode and comprised of a single semi-conductor body having a geometrical axis of symmetry and first and second parallel surfaces perpendicular to said axis of symmetry, said semi-conductor body including an n-type inner layer between first and second p-type outer layers defining said first and second surfaces, respectively, and forming first and second p-n junctions, respectively, with said n-type inner layer, the improvement comprising: a. first, second and third separate n -type diffused layers on said first p-type outer layer forming third, fourth and fifth p-n junctions, respectively, with said first p-type outer layer,
Claim 9
Dependent Claim
25 words
SAID FIRST OHMIC CONTACT CONSISTING OF METALLIZATION OVER SAID ENTIRE SECOND SURFACE, SAID FIRST OHMIC CONTACT FORMING ONE OF SAID FIRST AND SECOND MAIN ELECTRODES,
Claim 10
Dependent Claim
25 words
SAID FIRST OHMIC CONTACT CONSISTING OF METALLIZATION OVER SAID ENTIRE SECOND SURFACE, SAID FIRST OHMIC CONTACT FORMING ONE OF SAID FIRST AND SECOND MAIN ELECTRODES,
Claim 11
Dependent Claim
50 words
SAID FIRST N+-TYPE LAYER HAVING A SUBSTANTIALLY SEMICIRCULAR SHAPE DEFINED BY TWO SEMI-CIRCLES OF FIRST AND SECOND RADII, WHERE SAID FIRST RADIUS IS GREATER THAN SAID SECOND RADIUS, SAID FIRST N+-TYPE DIFFUSED LAYER BEING SITUATED ON ONE SIDE ONLY OF A DIAMETRICAL PLANE PERPENDICULAR TO SAID FIRST AND SECOND SURFACES,
Claim 12
Dependent Claim
50 words
SAID FIRST N+-TYPE LAYER HAVING A SUBSTANTIALLY SEMICIRCULAR SHAPE DEFINED BY TWO SEMI-CIRCLES OF FIRST AND SECOND RADII, WHERE SAID FIRST RADIUS IS GREATER THAN SAID SECOND RADIUS, SAID FIRST N+-TYPE DIFFUSED LAYER BEING SITUATED ON ONE SIDE ONLY OF A DIAMETRICAL PLANE PERPENDICULAR TO SAID FIRST AND SECOND SURFACES,
Claim 13
Dependent Claim
112 words
IN A BI-DIRECTIONAL GATE CONTROLLED SEMICONDUCTOR DEVICE OF THE TYPE HAVING FIRST AND SECOND MAIN ELECTRODES AND A GATE ELECTRODE AND COMPRISED OF A SINGLE SEMI-CONDUCTOR BODY HAVING A GEOMETRICAL AXIS OF SYMMETRY AND FIRST AND SECOND PARALLEL SURFACES PERPENDICULAR TO SAID AXIS OF SYMMETRY, SAID SEMI-CONDUCTOR BODY INCLUDING AN N-TYPE INNER LAYER BETWEEN FIRST AND SECOND P-TYPE OUTER LAYERS DEFINING SAID FIRST AND SECOND SURFACES, RESPECTIVELY, AND FORMING FIRST AND SECOND P-N JUNCTIONS, RESPECTIVELY, WITH SAID N-TYPE INNER LAYER, THE IMPROVEMENT COMPRISING: A. FIRST, SECOND AND THIRD SEPARATE N+-TYPE DIFFUSED LAYERS ON SAID FIRST P-TYPE OUTER LAYER FORMING THIRD, FOURTH AND FIFTH P-N JUNCTIONS, RESPECTIVELY, WITH SAID FIRST P-TYPE OUTER LAYER,
Claim 14
Dependent Claim
112 words
IN A BI-DIRECTIONAL GATE CONTROLLED SEMICONDUCTOR DEVICE OF THE TYPE HAVING FIRST AND SECOND MAIN ELECTRODES AND A GATE ELECTRODE AND COMPRISED OF A SINGLE SEMI-CONDUCTOR BODY HAVING A GEOMETRICAL AXIS OF SYMMETRY AND FIRST AND SECOND PARALLEL SURFACES PERPENDICULAR TO SAID AXIS OF SYMMETRY, SAID SEMI-CONDUCTOR BODY INCLUDING AN N-TYPE INNER LAYER BETWEEN FIRST AND SECOND P-TYPE OUTER LAYERS DEFINING SAID FIRST AND SECOND SURFACES, RESPECTIVELY, AND FORMING FIRST AND SECOND P-N JUNCTIONS, RESPECTIVELY, WITH SAID N-TYPE INNER LAYER, THE IMPROVEMENT COMPRISING: A. FIRST, SECOND AND THIRD SEPARATE N+-TYPE DIFFUSED LAYERS ON SAID FIRST P-TYPE OUTER LAYER FORMING THIRD, FOURTH AND FIFTH P-N JUNCTIONS, RESPECTIVELY, WITH SAID FIRST P-TYPE OUTER LAYER,
Claim 15
Dependent Claim
39 words
SAID FOURTH N+-TYPE LAYER HAVING A SUBSTANTIALLY SEMICIRCULAR SHAPE DEFINED BY TWO SEMI-CIRCLES OF SAID FIRST AND SECOND RADII, SAID FOURTH N+-TYPE LAYER BEING SITUATED ON THE OTHER SIDE ONLY OF SAID DIAMETRICAL PLANE OPPOSITE SAID FIRST N+-LAYER, AND
Claim 16
Dependent Claim
39 words
SAID FOURTH N+-TYPE LAYER HAVING A SUBSTANTIALLY SEMICIRCULAR SHAPE DEFINED BY TWO SEMI-CIRCLES OF SAID FIRST AND SECOND RADII, SAID FOURTH N+-TYPE LAYER BEING SITUATED ON THE OTHER SIDE ONLY OF SAID DIAMETRICAL PLANE OPPOSITE SAID FIRST N+-LAYER, AND
Claim 17
Dependent Claim
24 words
SAID SECOND N+-TYPE LAYER BEING C-SHAPED SUBSTANTIALLY CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE AND OPENING TOWARDS SAID FIRST N+-TYPE LAYER, AND
Claim 18
Dependent Claim
24 words
SAID SECOND N+-TYPE LAYER BEING C-SHAPED SUBSTANTIALLY CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE AND OPENING TOWARDS SAID FIRST N+-TYPE LAYER, AND
Claim 19
Dependent Claim
32 words
A device according to claim 1, wherein said first n -type layer and said fourth n -type layer are spaced apart from said diametrical plane by a distance of at least 0.1mm.
Claim 20
Dependent Claim
47 words
SAID FIFTH N+-TYPE LAYER HAVING THE SHAPE OF A DISC WITH A THIRD RADIUS AND CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE, SAID THIRD RADIUS BEING LESS THAN SAID SECOND RADIUS, C. FIRST, SECOND, THIRD, FOURTH AND FIFTH OHMIC CONTACTS DISPOSED ON THE SEMI-CONDUCTOR DEVICE,
Claim 21
Dependent Claim
47 words
SAID FIFTH N+-TYPE LAYER HAVING THE SHAPE OF A DISC WITH A THIRD RADIUS AND CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE, SAID THIRD RADIUS BEING LESS THAN SAID SECOND RADIUS, C. FIRST, SECOND, THIRD, FOURTH AND FIFTH OHMIC CONTACTS DISPOSED ON THE SEMI-CONDUCTOR DEVICE,
Claim 22
Dependent Claim
46 words
SAID SECOND OHMIC CONTACT CONSISTING OF A CIRCULAR METALLIZATION ON SAID FIRST SURFACE AND HAVING AN OUTER RADIUS GREATER THAN SAID FIRST RADIUS AND A INNER RADIUS GREATER THAN SAID SECOND RADIUS, SAID SECOND OHMIC CONTACT FORMING THE OUTER OF SAID FIRST AND SECOND MAIN ELECTRODES,
Claim 23
Dependent Claim
46 words
SAID SECOND OHMIC CONTACT CONSISTING OF A CIRCULAR METALLIZATION ON SAID FIRST SURFACE AND HAVING AN OUTER RADIUS GREATER THAN SAID FIRST RADIUS AND A INNER RADIUS GREATER THAN SAID SECOND RADIUS, SAID SECOND OHMIC CONTACT FORMING THE OUTER OF SAID FIRST AND SECOND MAIN ELECTRODES,
Claim 24
Dependent Claim
26 words
said second n -type layer being C-shaped substantially centered on the axis of symmetry of the device and opening towards said first n -type layer, and
Claim 25
Dependent Claim
26 words
said second n -type layer being C-shaped substantially centered on the axis of symmetry of the device and opening towards said first n -type layer, and
Claim 26
Dependent Claim
48 words
said fifth n -type layer having the shape of a disc with a third radius and centered on the axis of symmetry of the device, said third radius being less than said second radius, c. first, second, third, fourth and fifth ohmic contacts disposed on the semi-conductor device,
Claim 27
Dependent Claim
48 words
said fifth n -type layer having the shape of a disc with a third radius and centered on the axis of symmetry of the device, said third radius being less than said second radius, c. first, second, third, fourth and fifth ohmic contacts disposed on the semi-conductor device,
Claim 28
Dependent Claim
46 words
said second ohmic contact consisting of a circular metallization on said first surface and having an outer radius greater than said first radius and a inner radius greater than said second radius, said second ohmic contact forming the other of said first and second main electrodes,
Claim 29
Dependent Claim
46 words
said second ohmic contact consisting of a circular metallization on said first surface and having an outer radius greater than said first radius and a inner radius greater than said second radius, said second ohmic contact forming the other of said first and second main electrodes,
Claim 30
Dependent Claim
49 words
said third ohmic contact consisting of a metallization on said first surface in the shape of a disc centered on the axis of symmetry of the device and having a diameter smaller than the diameter of said second n -type layer, said third ohmic contact forming said gate electrode,
Claim 31
Dependent Claim
49 words
said third ohmic contact consisting of a metallization on said first surface in the shape of a disc centered on the axis of symmetry of the device and having a diameter smaller than the diameter of said second n -type layer, said third ohmic contact forming said gate electrode,
Claim 32
Dependent Claim
40 words
said third n -type layer completely surrounding said second n -type layer, b. fourth and fifth separate n -type diffused layers on said second p-type outer layer forming sixth and seventh p-n junctions, respectively, with said second p-type outer layer,
Claim 33
Dependent Claim
40 words
said third n -type layer completely surrounding said second n -type layer, b. fourth and fifth separate n -type diffused layers on said second p-type outer layer forming sixth and seventh p-n junctions, respectively, with said second p-type outer layer,
Claim 34
Dependent Claim
48 words
SAID THIRD OHMIC CONTACT CONSISTING OF A METALLIZATION ONE SAID FIRST SURFACE IN THE SHAPE OF A DISC CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE AND HAVING A DIAMETER SMALLER THAN THE DIAMETER OF SAID SECOND N+-TYPE LAYER, SAID THIRD OHMIC CONTACT FORMING SAID GATE ELECTRODE,
Claim 35
Dependent Claim
48 words
SAID THIRD OHMIC CONTACT CONSISTING OF A METALLIZATION ONE SAID FIRST SURFACE IN THE SHAPE OF A DISC CENTERED ON THE AXIS OF SYMMETRY OF THE DEVICE AND HAVING A DIAMETER SMALLER THAN THE DIAMETER OF SAID SECOND N+-TYPE LAYER, SAID THIRD OHMIC CONTACT FORMING SAID GATE ELECTRODE,
Claim 36
Dependent Claim
40 words
A device according to claim 2, the portion of said third n -type layer on the same side of said diametrical plane as said fourth n -type layer has an outer radius less than or equal to said second radius.
Claim 37
Dependent Claim
37 words
SAID THIRD N+-TYPE LAYER COMPLETELY SURROUNDING SAID SECOND N+-TYPE LAYER, B. FOURTH AND FIFTH SEPARATE N+-TYPE DIFFUSED LAYER ON SAID SECOND P-TYPE OUTER LAYER FORMING SIXTH AND SEVENTH P-N JUNCTIONS, RESPECTIVELY, WITH SAID SECOND P-TYPE OUTER LAYER,
Claim 38
Dependent Claim
37 words
SAID THIRD N+-TYPE LAYER COMPLETELY SURROUNDING SAID SECOND N+-TYPE LAYER, B. FOURTH AND FIFTH SEPARATE N+-TYPE DIFFUSED LAYER ON SAID SECOND P-TYPE OUTER LAYER FORMING SIXTH AND SEVENTH P-N JUNCTIONS, RESPECTIVELY, WITH SAID SECOND P-TYPE OUTER LAYER,
Claim 39
Dependent Claim
61 words
A device according to claim 3, wherein said third n -type layer is separated from said first n -type layer by a distance of at least 0.5mm, thereby providing between said first and third n -type layers a transversal passage for the current which creates between said second and third ohmic contacts a resistance having a value less than 10 ohms.
Claim 40
Dependent Claim
53 words
SAID FOURTH OHMIC CONTACT CONSISTING OF A METALLIZATION ON SAID FIRST SURFACE HAVING THE SHAPE OF A PART OF A RING SITUATED ON THE SAME SIDE OF SAID DIAMETRICAL PLANE AS SAID FIRST N+-TYPE LAYER AND COVERING PART OF SAID FIFTH P-N JNCTION ON THE OUTER EDGE OF SAID THIRD N+-TYPE LAYER, AND
Claim 41
Dependent Claim
53 words
SAID FOURTH OHMIC CONTACT CONSISTING OF A METALLIZATION ON SAID FIRST SURFACE HAVING THE SHAPE OF A PART OF A RING SITUATED ON THE SAME SIDE OF SAID DIAMETRICAL PLANE AS SAID FIRST N+-TYPE LAYER AND COVERING PART OF SAID FIFTH P-N JNCTION ON THE OUTER EDGE OF SAID THIRD N+-TYPE LAYER, AND
Claim 42
Dependent Claim
55 words
said fourth ohmic contact consisting of a metallization on said first surface having the shape of a part of a ring situated on the same side of said diametrical plane as said first n -type layer and covering part of said fifth p-n junction on the outer edge of said third n -type layer, and
Claim 43
Dependent Claim
55 words
said fourth ohmic contact consisting of a metallization on said first surface having the shape of a part of a ring situated on the same side of said diametrical plane as said first n -type layer and covering part of said fifth p-n junction on the outer edge of said third n -type layer, and
Claim 44
Dependent Claim
52 words
SAID FIFTH OHMIC CONTACT CONSISTING OF A METALLIZATION ON SAID FIRST SURFACE HAVING THE SHAPE OF A PART OF A RING AND SITUATED ON THE SIDE OF SAID DIAMETRICAL PLANE OPPOSITE SAID FIRST N+-TYPE LAYER AND COVERING PART OF SAID FIFTH P-N JUNCTION ON THE INNER EDGE OF SAID THIRD N+-TYPE LAYER.
Claim 45
Dependent Claim
52 words
SAID FIFTH OHMIC CONTACT CONSISTING OF A METALLIZATION ON SAID FIRST SURFACE HAVING THE SHAPE OF A PART OF A RING AND SITUATED ON THE SIDE OF SAID DIAMETRICAL PLANE OPPOSITE SAID FIRST N+-TYPE LAYER AND COVERING PART OF SAID FIFTH P-N JUNCTION ON THE INNER EDGE OF SAID THIRD N+-TYPE LAYER.
Claim 46
Dependent Claim
37 words
A device according to claim 4, wherein said fifth n -type layer is separated from said fourth n -type layer and said first ohmic contact short circuits on the second surface said sixth and seventh p-n junctions.
Claim 47
Dependent Claim
54 words
said fifth ohmic contact consisting of a metallization on said first surface having the shape of a part of a ring and situated on the side of said diametrical plane opposite said first n -type layer and covering part of said fifth p-n junction on the inner edge of said third n -type layer.
Claim 48
Dependent Claim
54 words
said fifth ohmic contact consisting of a metallization on said first surface having the shape of a part of a ring and situated on the side of said diametrical plane opposite said first n -type layer and covering part of said fifth p-n junction on the inner edge of said third n -type layer.
Claim 49
Dependent Claim
46 words
A device according to claim 5, wherein the projections of said fifth n -type layer and said first n -type layer on a plane parallel to said first and second surfaces of the semi-conductor body are spaced apart by a distance of at least 0.2 mm.
Claim 50
Dependent Claim
25 words
A device according to claim 6, wherein said fourth n -type layer and said first n -type layer is provided with a short circuit emitter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-21 | 1978-10-21 | 1979-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-21 | 1982-10-21 | 1983-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-21 | 1986-10-21 | 1987-04-22 | $7700.00 | Window Closed / Lapsed |