Patent US3896484A successfully refreshed from Google Patents.
US3896484A
Expired / Lapsed
US
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Intrinsic semiconductor charge transfer device using alternate transfer of electrons and holes
Assignee: Individual
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Filing: 1974-02-06
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Granted: 1975-07-22
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Expires: 1994-02-06
Abstract
Abstract A semiconductor data transmission device having an MIS structure including an intrinsic semiconductor and a plurality of metallic electrodes disposed in a predetermined pattern on its insulating layer. One of the electrodes serves as a gate electrode for injecting both groups of positive polarity carriers and groups of negative polarity carriers successively into the semiconductor and the remaining electrodes are interconnected by a time delay line. A pulse is applied to one end of the time delay line connected to that electrode nearest to the gate electrode to simultaneously transfer those groups of positive carriers and those groups of negative carriers injected into the semiconductor. A low frequency voltage is supplied to a particular one of the electrode to form carriers opposite in polarity from the moved carriers below it to extinguish the latter through the recombination.
Inventors
- 👤 Jun-Ichi Nishizawa
- 👤 Termumoto Nonaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:54
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D44/476; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C27/00; G11C27/04; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D62/351; H10D62/386; Y; Y10; Y10S; Y10S257/00; Y10S257/912
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
181 words
A semiconductor data transmission device for transmitting groups of carriers each corresponding to digital data comprising: a substrate composed of intrinsic semiconductive material having a pair of opposite main faces; a layer composed of electrically insulating material disposed on one of said main faces of said substrate; a plurality of metallic electrodes disposed in spacedapart relationship in a predetermined pattern on the surface of the electrically insulating layer; a metallic electrode disposed on the main face of said substrate; means for selectively injecting both groups of positive polarity carriers and groups of negative polarity carriers successively into said intrinsic semiconductive substrate; and time delay means connected to said plurality of metallic electrodes disposed on the surface of said electrically insulating layer and responsive to both positive and negative voltage pulses selectively and successively applied to one end thereof for delaying the voltage pulses to apply each in succession to each of said plurality of electrodes to simultaneously transfer through the substrate those groups of positive polarity carriers and those groups of negative polarity carriers that have been injected into the substrate.
Claim 2
Dependent Claim
181 words
A semiconductor data transmission device for transmitting groups of carriers each corresponding to digital data comprising: a substrate composed of intrinsic semiconductive material having a pair of opposite main faces; a layer composed of electrically insulating material disposed on one of said main faces of said substrate; a plurality of metallic electrodes disposed in spacedapart relationship in a predetermined pattern on the surface of the electrically insulating layer; a metallic electrode disposed on the main face of said substrate; means for selectively injecting both groups of positive polarity carriers and groups of negative polarity carriers successively into said intrinsic semiconductive substrate; and time delay means connected to said plurality of metallic electrodes disposed on the surface of said electrically insulating layer and responsive to both positive and negative voltage pulses selectively and successively applied to one end thereof for delaying the voltage pulses to apply each in succession to each of said plurality of electrodes to simultaneously transfer through the substrate those groups of positive polarity carriers and those groups of negative polarity carriers that have been injected into the substrate.
Claim 3
Dependent Claim
47 words
A semiconductor data transmission device as claimed in claim 1, wherein said means for selectively injecting both groups of carriers comprise a gate electrode disposed on said electrically insulating layer and said metallic electrode on said other main face of said substrate for receiving a voltage thereacross.
Claim 4
Dependent Claim
39 words
A semiconductor data transmission device as claimed in claim 1, further comprising means coupled to a selected one of said electrodes on said electrically insulating layer for controlling the transfer of the groups of injected carriers through the substrate.
Claim 5
Dependent Claim
77 words
A semiconductor data transmission device as claimed in claim 1, wherein said means for injecting the groups of carriers comprises a gate electrode disposed on said electrically insulating layer and said metallic electrode on said other main face of said substrate receptive of a voltage thereacross, and wherein said time delay means comprises a time delay line having One end thereof connected to the electrode disposed on said electrically insulating layer and nearest to said gate electrode.
Claim 6
Dependent Claim
48 words
A semiconductor data transmission device according to claim 4, wherein said time delay line comprises two multistage shift registers and a plurality of adders each receptive of the output of the same stage of both shift registers and having the output thereof connected to one of said electrodes.
Claim 7
Dependent Claim
77 words
A semiconductor data transmission device as claimed in claim 1, further comprising control means for controlling the transfer of the groups of injected carriers through said substrate including an inductor receptive of a low frequency voltage applied thereto and connected to a selected one of said plurality of electrodes disposed on said electrically insulating layer, and two capacitors each connected to said selected electrode and each connected to one of the electrodes adjacent to said selected electrode.
Claim 8
Dependent Claim
65 words
A semiconductor data transmission device according to claim 1, further comprising control means coupled to a selected one of said plurality of electrodes for effecting recombination of the groups of carriers to be transferred from the selected electrode with carriers of the opposite polarity to inhibit the transfer of the groups of carriers to succeeding electrodes thereby controlling the transfer of the groups of carriers.
Claim 9
Dependent Claim
49 words
A semiconductor data transmission device according to claim 1, wherein said time delay means comprises three conductors each connected a different group of every three electrodes and each receptive of a clock pulse train applied thereto wherein each clock pulse train is out of phase with the other two.
Claim 10
Dependent Claim
25 words
A semiconductor data transmission device according to claim 1, wherein said means for injecting carriers into said substrate comprises a first semiconductor device connected thereto.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-21 | 1979-01-20 | 1979-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-21 | 1983-01-20 | 1983-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-21 | 1987-01-20 | 1987-07-22 | $7700.00 | Window Closed / Lapsed |