Abstract A process for the production of a two-phase charge shift arrangement for a charge coupled device with a doping barrier which includes forming an electrically insulating layer on a semiconductor substrate, forming a metal layer on said insulating layer, covering said metal layer with a photo-resist layer, selectively etching said photo-resist layer and through said metal layer to provide a row of electrodes, the etching operation including under-etching the photo-resist layer at each gap to provide a wider gap in the electrode than in the photo-resist, the ratio of the width of the gap in the photo-resist to the total gap height being approximately 1:1, and then irradiating the gaps with an ion beam directed at an oblique angle to the surface of the substrate to cause ions to be implanted in the substrate below one edge region of each electrode and in the substrate below a portion of the bottom of the gap adjacent said one side edge of each said electrode.
A PROCESS FOR THE PRODUCTION OF A TWO-PHASE CHARGE SHIFT ARRANGEMENT FOR A CHARGE COUPLED DEVICE WHICH INCLUDES: FORMING AN ELECTRICALLY INSULATING LAYER ON A SEMICONDUCTOR SUBSTRATE, FORMING A METAL LAYER ON SAID INSULATING LAYER, COVERING SAID METAL LAYER WITH A PHOTO-RESIST LAYER, SELECTIVELY ETCHING SAID PHOTO-RESIST LAYER AND SAID METAL LAYER TO FORM A ROW OF GAPS WHICH EXTEND COMPLETELY THROUGH SAID PHOTO-RESIST LAYER AND SAID METAL LAYER TO PROVIDE A ROW O ELECTRIDES, THE ETCHING STEP INCLUDING UNDER-ETCHING SAID PHOTO-RESIST LAYER IN EACH OF SAID HAPS TO PROVIDE A WIDER GAP IN SAID METAL LAYER THAN IN SAID
Claim 2
Dependent Claim
100 words
A PROCESS FOR THE PRODUCTION OF A TWO-PHASE CHARGE SHIFT ARRANGEMENT FOR A CHARGE COUPLED DEVICE WHICH INCLUDES: FORMING AN ELECTRICALLY INSULATING LAYER ON A SEMICONDUCTOR SUBSTRATE, FORMING A METAL LAYER ON SAID INSULATING LAYER, COVERING SAID METAL LAYER WITH A PHOTO-RESIST LAYER, SELECTIVELY ETCHING SAID PHOTO-RESIST LAYER AND SAID METAL LAYER TO FORM A ROW OF GAPS WHICH EXTEND COMPLETELY THROUGH SAID PHOTO-RESIST LAYER AND SAID METAL LAYER TO PROVIDE A ROW O ELECTRIDES, THE ETCHING STEP INCLUDING UNDER-ETCHING SAID PHOTO-RESIST LAYER IN EACH OF SAID HAPS TO PROVIDE A WIDER GAP IN SAID METAL LAYER THAN IN SAID
Claim 3
Dependent Claim
43 words
A process as set forth in claim 1, in which the gap width in said photo-resist layer is 2-4 Mu , the thickness of said photo-resist layer is 1-3 Mu , and the thickness of said electrodes is 0.5 - 1.5 Mu .
Claim 4
Dependent Claim
14 words
A process as set forth in claim 2, in which said substrate is silicon.
Claim 5
Dependent Claim
15 words
A process as set forth in claim 3, in which said insulating layer is SiO2.
Claim 6
Dependent Claim
15 words
A process as set forth in claim 4, in which said metal layer is aluminum.