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US3943545A
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US
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Low interelectrode leakage structure for charge-coupled devices
Assignee: Fairchild Semiconductor Corp
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Filing: 1975-05-22
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Granted: 1976-03-09
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Expires: 1995-05-22
Abstract
Abstract A charge-coupled device having a semiconductor substrate, a layer of insulation covering the substrate, and a plurality of spaced-apart electrodes formed from a doped, polycrystalline semiconductor material of a particular conductivity type includes regions of interelectrode material doped with an impurity of a conductivity type opposite to said particular conductivity type.
Inventors
- 👤 Choong-Ki Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:44
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10P; H10P95/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
112 words
In a charge-coupled device having a semiconductor substrate, a layer of insulation covering said substrate, a plurality of spaced-apart electrodes formed from a doped polycrystalline semiconductor material on said layer of insulation and having a particular conductivity type, and regions of polycrystalline semiconductor interelectrode material located between said plurality of spaced-apart electrodes, and means connected to said electrodes for forming a spatially defined depletion region in said substrate beneath said electrodes and for transferring charge from one location to another in said depletion region, the improvement comprising: said polycrystalline semiconductor interelectrode material contains a dopant which gives to said polycrystalline semiconductor interelectrode material a conductivity type opposite to said particular conductivity type.
Claim 2
Dependent Claim
112 words
In a charge-coupled device having a semiconductor substrate, a layer of insulation covering said substrate, a plurality of spaced-apart electrodes formed from a doped polycrystalline semiconductor material on said layer of insulation and having a particular conductivity type, and regions of polycrystalline semiconductor interelectrode material located between said plurality of spaced-apart electrodes, and means connected to said electrodes for forming a spatially defined depletion region in said substrate beneath said electrodes and for transferring charge from one location to another in said depletion region, the improvement comprising: said polycrystalline semiconductor interelectrode material contains a dopant which gives to said polycrystalline semiconductor interelectrode material a conductivity type opposite to said particular conductivity type.
Claim 3
Dependent Claim
42 words
A charge-coupled device as recited in claim 1, further comprising a buried-channel layer formed in the topmost surface of said semiconductor substrate, said buried-channel layer having said particular conductivity-type and said substrate having said conductivity type opposite to said particular conductivity type.
Claim 4
Dependent Claim
28 words
A charge-coupled device as recited in claim 1 wherein said plurality of spaced-apart electrodes are of n-conductivity type and said polycrystalline semiconductor interelectrode material is of p-conductivity type.
Claim 5
Dependent Claim
27 words
A charge-coupled device as recited in claim 3 wherein the concentration of said dopant lies within the range of 10 13 to 10 17 atoms/cm 3 .
Claim 6
Dependent Claim
27 words
A charge-coupled device as recited in claim 3 wherein the concentration of said dopant lies within the range of 10 15 to 10 16 atoms/cm 3 .
Claim 7
Dependent Claim
13 words
A charge-coupled device as recited in claim 5 wherein said dopant is boron.
References Cited (Backward Citations)
US3728590A
Cited
US3836409A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |