Patent US3779110A successfully refreshed from Google Patents.
Patent US4013466A successfully refreshed from Google Patents.
US4013466A
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US
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Method of preparing a circuit utilizing a liquid crystal artwork master
Assignee: AT&T Inc
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Filing: 1975-06-26
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Granted: 1977-03-22
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Expires: 1995-06-26
Abstract
Abstract A method of forming a circuit mask is disclosed. The method comprises selectively heating a portion of a cell comprising a liquid crystal above the transition temperature of the liquid crystal material to render the portion capable of scattering a desired radiant energy. An artwork master is thus formed having a pattern delineated therein capable of transmitting the desired radiant energy therethrough. A member having a surface sensitive to the desired radiant energy is positioned in a desired spatial relationship with the master. The master is exposed to the desired radiant energy whereby the radiant energy is transmitted through the pattern to expose at least a portion of the sensitive surface thereto. The exposed sensitive surface is treated to form the circuit mask having a pattern capable of transmitting light therethrough.
Inventors
- 👤 Robert James Klaiber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:33
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70216; G03F7/70283; G03F7/70291; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/132; H; H05; H05K; H05K3/00; H05K3/0002; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
119 words
A method of forming a circuit mask which comprises: a. heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting a desired radiant energy therethrough in an imagewise manner; b. positioning a member, having a surface sensitive to said desired radiant energy, in a desired spatial relationship with said master; c. exposing said master to said desired radiant energy to transmit said radiant energy through said pattern to form a radiation-exposed pattern on said sensitive surface; and d. treating said exposed sensitive surface to form a pattern capable of transmitting radiant energy therethrough to form the circuit mask.
Claim 2
Independent Claim
119 words
A method of forming a circuit mask which comprises: a. heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting a desired radiant energy therethrough in an imagewise manner; b. positioning a member, having a surface sensitive to said desired radiant energy, in a desired spatial relationship with said master; c. exposing said master to said desired radiant energy to transmit said radiant energy through said pattern to form a radiation-exposed pattern on said sensitive surface; and d. treating said exposed sensitive surface to form a pattern capable of transmitting radiant energy therethrough to form the circuit mask.
Claim 3
Dependent Claim
20 words
The method as defined in claim 1 wherein said heating in step (a) is by means of a laser beam.
Claim 4
Dependent Claim
14 words
The method as defined in claim 1 wherein said crystal comprises a smectic crystal.
Claim 5
Dependent Claim
14 words
The method as defined in claim 3 wherein said smectic crystal comprises N-(p-cyanobenzylidene)-p-n octylaniline.
Claim 6
Dependent Claim
185 words
In an improved method of forming a printed circuit which comprises the steps of: a. providing a laminate comprising a dielectric base having a metal layer on at least one surface thereof; b. coating the metal layer with a radiation-sensitive material to form a radiation-sensitive layer thereon; c. selectively exposing the radiation-sensitive layer to the radiation to form a radiation-exposed pattern thereon; d. treating the selectively radiation-exposed layer to remove unwanted portions thereof to form a pattern comprising uncoated portions of the metal layer; e. treating the uncoated metal portions to remove them from the dielectric base; and f. removing the remaining portions of the radiation-sensitive layer wherein the improvement comprises: in step (c), the selectively exposing comprising, a 1 . heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting the radiation therethrough in an imagewise manner; and b 1 . exposing said master to the radiation to transmit the radiation through said pattern to form the radiation-exposed pattern on the radiation-sensitive layer.
Claim 7
Dependent Claim
185 words
In an improved method of forming a printed circuit which comprises the steps of: a. providing a laminate comprising a dielectric base having a metal layer on at least one surface thereof; b. coating the metal layer with a radiation-sensitive material to form a radiation-sensitive layer thereon; c. selectively exposing the radiation-sensitive layer to the radiation to form a radiation-exposed pattern thereon; d. treating the selectively radiation-exposed layer to remove unwanted portions thereof to form a pattern comprising uncoated portions of the metal layer; e. treating the uncoated metal portions to remove them from the dielectric base; and f. removing the remaining portions of the radiation-sensitive layer wherein the improvement comprises: in step (c), the selectively exposing comprising, a 1 . heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting the radiation therethrough in an imagewise manner; and b 1 . exposing said master to the radiation to transmit the radiation through said pattern to form the radiation-exposed pattern on the radiation-sensitive layer.
Claim 8
Dependent Claim
22 words
The method as defined in claim 5 wherein said heating in step (a 1 ) is by means of a laser beam.
Claim 9
Dependent Claim
14 words
The method as defined in claim 5 wherein said crystal comprises a smectic crystal.
Claim 10
Dependent Claim
14 words
The method as defined in claim 7 wherein said smectic crystal comprises N-(p-cyanobenzylidene)-p-n octylaniline.
Claim 11
Dependent Claim
169 words
In an improved method of treating a semiconductive wafer, comprising the steps of: a. depositing a masking layer on a surface of the semiconductive wafer; b. forming a layer sensitive to a desired radiation on the masking layer; c. selectively exposing the radiation-sensitive layer to the desired radiation to form a radiation-exposed pattern thereon; d. treating the radiation-sensitive layer to remove a portion thereof to expose an underlying surface area of the masking layer; and e. removing the underlying surface area to expose the underlying semiconductive surface area of the wafer, wherein the improvement comprises: in step (c), the selectively exposing comprising a 1 . heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting the radiation therethrough in an imagewise manner; and b 1 . exposing said master to the radiation to transmit the radiation through said pattern to form the radiation-exposed pattern on the radiation-sensitive layer.
Claim 12
Dependent Claim
169 words
In an improved method of treating a semiconductive wafer, comprising the steps of: a. depositing a masking layer on a surface of the semiconductive wafer; b. forming a layer sensitive to a desired radiation on the masking layer; c. selectively exposing the radiation-sensitive layer to the desired radiation to form a radiation-exposed pattern thereon; d. treating the radiation-sensitive layer to remove a portion thereof to expose an underlying surface area of the masking layer; and e. removing the underlying surface area to expose the underlying semiconductive surface area of the wafer, wherein the improvement comprises: in step (c), the selectively exposing comprising a 1 . heating a selected portion of a cell comprising a liquid crystal above the transition temperature of said crystal to form an artwork master having a pattern formed therein capable of transmitting the radiation therethrough in an imagewise manner; and b 1 . exposing said master to the radiation to transmit the radiation through said pattern to form the radiation-exposed pattern on the radiation-sensitive layer.
Claim 13
Dependent Claim
22 words
The method as defined in claim 9 wherein said heating in step (a 1 ) is by means of a laser beam.
Claim 14
Dependent Claim
14 words
The method as defined in claim 9 wherein said crystal comprises a smectic crystal.
Claim 15
Dependent Claim
12 words
The method as defined in claim 11 wherein said crystal comprises N-(p-cyanobenzylidene)-p-n-octylaniline.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-21 | 1980-09-20 | 1981-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-21 | 1984-09-20 | 1985-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-21 | 1988-09-20 | 1989-03-22 | $7700.00 | Window Closed / Lapsed |