Patent US4021278A successfully refreshed from Google Patents.
US4021278A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reduced meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
Assignee: International Business Machines Corp
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Filing: 1975-12-12
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Granted: 1977-05-03
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Expires: 1995-12-12
Abstract
Abstract The invention relates to a method for reducing the consumption of deleterious materials used in the manufacture of semiconductor devices comprising the steps of supporting a semiconductor wafer, supplying a predetermined volume of said materials onto the surface of said wafer to form a meniscus contained body of said materials less than the normal meniscus formed by the particular material, maintaining said wafer in a static condition during the desired reaction period, sensing the completion of said reaction and spinning said wafer upon completion of said reaction to remove reaction products and terminate the reaction. Accordingly, this invention is directed at significantly reducing the initial cost of the processing fluids and the large investment and maintenance costs needed to provide the means for recovering precious materials in the fluid waste, and for the environmental disposal of corrosive waste materials resulting from the use of the fluids in integrated circuit manufacture.
Inventors
- 👤 Roderick Kermit Hood
- 👤 Karl Heinz Raacke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:34
CPC Classifications
H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
197 words
A method for static liquid treatment of a surface of a semiconductor wafer with a liquid capable of forming a meniscus on said wafer having a liquid surface parallel to said wafer surface at a given distance from said wafer surface comprising: supporting said wafer upon a rotatable means and providing in superimposed proximity thereof a means for limiting the space height distance between said wafer and said limiting means, said space height distance being less than said given distance, forcing predetermined volume of fluid between said wafer and distance limiting means so as to form a meniscus of said liquid at the periphery of said wafer, whereby the entire surface of said wafer is covered with said liquid in a meniscus formed body of less dimension than normally formed in the absence of said limiting means, statically maintaining said liquid meniscus body on said wafer until reaction between said liquid and wafer surface is accomplished as predetermined, determining the predetermined completion of said reaction, spinning said wafer to apply centrifugal force to said wafer and liquid body at the time of sensing the predetermined reaction is complete thereby immediately removing the reactant liquid from the wafer.
Claim 2
Independent Claim
197 words
A method for static liquid treatment of a surface of a semiconductor wafer with a liquid capable of forming a meniscus on said wafer having a liquid surface parallel to said wafer surface at a given distance from said wafer surface comprising: supporting said wafer upon a rotatable means and providing in superimposed proximity thereof a means for limiting the space height distance between said wafer and said limiting means, said space height distance being less than said given distance, forcing predetermined volume of fluid between said wafer and distance limiting means so as to form a meniscus of said liquid at the periphery of said wafer, whereby the entire surface of said wafer is covered with said liquid in a meniscus formed body of less dimension than normally formed in the absence of said limiting means, statically maintaining said liquid meniscus body on said wafer until reaction between said liquid and wafer surface is accomplished as predetermined, determining the predetermined completion of said reaction, spinning said wafer to apply centrifugal force to said wafer and liquid body at the time of sensing the predetermined reaction is complete thereby immediately removing the reactant liquid from the wafer.
Claim 3
Dependent Claim
41 words
A method for static liquid treatment of semiconductor wafer in accordance with claim 1 wherein said rotatable supporting means comprises a rotatable spindle having a platform thereon and a vacuum chuck means integral therewith for securing said wafer to said platform.
Claim 4
Dependent Claim
22 words
A method for static liquid treatment of semiconductor wafer in accordance with claim 1 wherein said liquid is a photosensitive lithographic liquid.
Claim 5
Dependent Claim
32 words
A method for static liquid treatment of semiconductor wafer in accordance with claim 1 wherein said wafer contains a photolithic exposed photosensitive pattern thereon and the said liquid is a photoresist developer.
Claim 6
Dependent Claim
28 words
A method for static liquid treatment of semiconductor wafer in accordance with claim 1 wherein said wafer contains a developed photoresist pattern and said solution is an etchant.
Claim 7
Dependent Claim
23 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said rotatable means is angular from the horizontal.
Claim 8
Dependent Claim
35 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said means for limiting the distance between said wafer and said limiting means conforms to the configuration of the wafer.
Claim 9
Dependent Claim
21 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said wafer has a concave configuration.
Claim 10
Dependent Claim
21 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said wafer has a convex shape.
Claim 11
Dependent Claim
30 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said wafer has a given configuration and the configuration of said rotatable means conforms therewith.
Claim 12
Dependent Claim
31 words
A method for static liquid treatment of semiconductor wafers in accordance with claim 1 wherein said limiting distance means is movable from any superimposed position respecting said wafer and rotatable means.
Claim 13
Independent Claim
126 words
A method for treatment of a surface of a semiconductor wafer with an etching liquid capable of forming a meniscus on said wafer having a liquid surface parallel to said wafer surface at a given distance from said wafer surface comprising supporting said wafer in a fixed position, disposing a plate having a surface in juxtaposition with said wafer surface at a distance within said given distance from said wafer surface, applying said etching liquid to said wafer surface until said liquid completely fills a volume defined by said wafer surface, said plate surface and meniscus formed between said surfaces at the periphery of said liquid, and spinning said wafer at a given time to remove said etching liquid from said wafer surface by centrifugal force.
Claim 14
Independent Claim
126 words
A method for treatment of a surface of a semiconductor wafer with an etching liquid capable of forming a meniscus on said wafer having a liquid surface parallel to said wafer surface at a given distance from said wafer surface comprising supporting said wafer in a fixed position, disposing a plate having a surface in juxtaposition with said wafer surface at a distance within said given distance from said wafer surface, applying said etching liquid to said wafer surface until said liquid completely fills a volume defined by said wafer surface, said plate surface and meniscus formed between said surfaces at the periphery of said liquid, and spinning said wafer at a given time to remove said etching liquid from said wafer surface by centrifugal force.
Claim 15
Dependent Claim
23 words
A method as set forth in claim 12 wherein said liquid is applied to said wafer surface through an opening in said plate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-02 | 1980-11-01 | 1981-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-02 | 1984-11-01 | 1985-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-02 | 1988-11-01 | 1989-05-03 | $7700.00 | Window Closed / Lapsed |