US4021833A
Expired / Lapsed
US
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Infrared photodiode
Assignee: Honeywell Inc
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Filing: 1976-05-17
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Granted: 1977-05-03
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Expires: 1996-05-17
Abstract
Abstract An improved lead tin telluride Schottky barrier photodiode includes a lead telluride -- lead tin telluride heterojunction structure to increase zero bias resistance.
Inventors
- 👤 Mark N. Gurnee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:42
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
92 words
An infrared sensitive photodiode comprising: a body of a first semiconductor material, Pb 1 -x Sn x Te 1 -y Se y , where 0≦x≦1 and 0≦y≦1; a thin layer of a second semiconductor material on at least a portion of a surface of the body, forming a heterojunction to the body of the first semiconductor material, the second semiconductor material having a wider bandgap than the first semiconductor material; and Schottky barrier means attached to the thin layer, wherein the heterojunction is within a depletion region associated with Schottky barrier means.
Claim 2
Dependent Claim
92 words
An infrared sensitive photodiode comprising: a body of a first semiconductor material, Pb 1 -x Sn x Te 1 -y Se y , where 0≦x≦1 and 0≦y≦1; a thin layer of a second semiconductor material on at least a portion of a surface of the body, forming a heterojunction to the body of the first semiconductor material, the second semiconductor material having a wider bandgap than the first semiconductor material; and Schottky barrier means attached to the thin layer, wherein the heterojunction is within a depletion region associated with Schottky barrier means.
Claim 3
Dependent Claim
30 words
The infrared sensitive photodiode of claim 1 wherein the second semiconductor material is Pb 1 -x ,Sn x ,Te 1 -y ,Se y , where x> x'≧0 and/or y> y'≧0.
Claim 4
Dependent Claim
23 words
The infrared sensitive photodiode of claim 2 wherein the thin layer has a thickness of between about 200 A and about 2,000 A.
Claim 5
Dependent Claim
14 words
The infrared sensitive photodiode of claim 3 wherein the second semiconductor material is PbTe.
Claim 6
Dependent Claim
14 words
The infrared sensitive photodiode of claim 4 wherein the first material has p-type conductivity.
Claim 7
Dependent Claim
14 words
The infrared sensitive photodiode of claim 5 wherein the second material has p-type conductivity.
Claim 8
Dependent Claim
26 words
The infrared sensitive photodiode of claim 6 wherein the Schottky barrier means comprises a contact of a metal from the group consisting of lead and indium.
Claim 9
Dependent Claim
20 words
The infrared sensitive photodiode of claim 1 wherein the thin layer has a lower intrinsic carrier concentration than the body.
Claim 10
Dependent Claim
19 words
The infrared sensitive photodiode of claim 1 wherein the first and second semiconductor materials have the same conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-02 | 1980-11-01 | 1981-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-02 | 1984-11-01 | 1985-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-02 | 1988-11-01 | 1989-05-03 | $7700.00 | Window Closed / Lapsed |