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Patent US4040870A successfully refreshed from Google Patents.
US4040870A
Expired / Lapsed
US
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Deposition method
Assignee: Air Products and Chemicals Inc
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Filing: 1975-06-19
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Granted: 1977-08-09
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Expires: 1995-06-19
Abstract
Abstract A method of depositing a hard metal alloy is described wherein a volatile halide of titanium is reduced off the surface of a substrate and then reacted with a volatile halide of boron, carbon or silicon to effect the deposition on a substrate of an intermediate compound of titanium in a liquid phase. The liquid compound on the substrate is then reacted in the presence of hydrogen to produce a hard deposit containing titanium and boron, carbon or silicon. Also described are products which may be produced by the above method.
Inventors
- 👤 Robert A. Holzl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C28/00; C23C28/02; C23C28/023
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
118 words
A method for producing a hard deposit on a substrate, comprising, providing a gaseous volatile halide of titanium, reducing said volatile halide off the surface of the substrate to form a lower halide of titanium, reacting said lower halide in the presence of a volatile halide of boron, carbon or silicon downstream from said halide reduction while maintaining the pressure and substrate temperature such as to cause the deposition on the substrate of an intermediate compound of titanium which is in a liquid phase, and reacting the liquid phase intermediate compound on the surface of the substrate with a volatile halide of boron, carbon or silicon to produce a hard deposit containing titanium and boron, carbon or silicon.
Claim 2
Independent Claim
118 words
A method for producing a hard deposit on a substrate, comprising, providing a gaseous volatile halide of titanium, reducing said volatile halide off the surface of the substrate to form a lower halide of titanium, reacting said lower halide in the presence of a volatile halide of boron, carbon or silicon downstream from said halide reduction while maintaining the pressure and substrate temperature such as to cause the deposition on the substrate of an intermediate compound of titanium which is in a liquid phase, and reacting the liquid phase intermediate compound on the surface of the substrate with a volatile halide of boron, carbon or silicon to produce a hard deposit containing titanium and boron, carbon or silicon.
Claim 3
Dependent Claim
31 words
A method according to claim 1 wherein the lower halide is reacted in the presence of hydrogen, and wherein the liquid phase intermediate compound is reacted in the presence of hydrogen.
Claim 4
Dependent Claim
56 words
A method according to claim 1 wherein the substrate is metallic, and wherein the outer surface of the substrate is first reacted with a halide of boron, carbon or silicon in a gaseous form in the presence of hydrogen to form a diffusion layer containing boron, carbon, or silicon at the outer surface of the substrate.
Claim 5
Dependent Claim
18 words
A method according to claim 1 wherein the lower halide is reacted with a volatile halide of boron.
Claim 6
Dependent Claim
18 words
A method according to claim 1 wherein the lower halide is reacted with a volatile halide of carbon.
Claim 7
Dependent Claim
18 words
A method according to claim 1 wherein the lower halide is reacted with a volatile halide of silicon.
Claim 8
Independent Claim
143 words
A method for producing a hard deposit on a substrate, comprising, placing the substrate in a chemical vapor deposition reactor and heating the substrate to a temperature of between about 650° C. and about 950° C., providing a flow in the reactor of a gaseous volatile halide of titanium, reacting the volatile halide with a reducing agent to produce a lower halide, providing a flow downstream of the reduction in the reactor of a volatile halide of boron, carbon or silicon, and controlling the substrate temperature, the reactor pressure and the relative amounts of titanium, and boron, carbon or silicon to cause the deposition on the substrate of a compound of titanium which is in a liquid phase and a subsequent conversion of said liquid phase on the surface of the substrate to a hard deposit containing titanium and boron, carbon or silicon.
Claim 9
Independent Claim
143 words
A method for producing a hard deposit on a substrate, comprising, placing the substrate in a chemical vapor deposition reactor and heating the substrate to a temperature of between about 650° C. and about 950° C., providing a flow in the reactor of a gaseous volatile halide of titanium, reacting the volatile halide with a reducing agent to produce a lower halide, providing a flow downstream of the reduction in the reactor of a volatile halide of boron, carbon or silicon, and controlling the substrate temperature, the reactor pressure and the relative amounts of titanium, and boron, carbon or silicon to cause the deposition on the substrate of a compound of titanium which is in a liquid phase and a subsequent conversion of said liquid phase on the surface of the substrate to a hard deposit containing titanium and boron, carbon or silicon.
Claim 10
Dependent Claim
16 words
A method according to claim 7 wherein a flow of hydrogen is provided in the reactor.
Claim 11
Dependent Claim
21 words
A method according to claim 8 wherein the amount of hydrogen in the reactor does not exceed ten times stoichiometric amounts.
Claim 12
Dependent Claim
33 words
A method according to claim 8 wherein the titanium halide is reduced by passing a mixture of hydrogen and the titanium halide through a heated zone held at not less than 700° C.
Claim 13
Dependent Claim
28 words
A method according to claim 8 wherein the volatile halide of titanium comprises titanium chloride, and wherein the volatile halide of boron, carbon or silicon comprises a chloride.
Claim 14
Dependent Claim
13 words
A method according to claim 11 wherein said last-named halide comprises boron trichloride.
Claim 15
Dependent Claim
13 words
A method according to claim 11 wherein said last-named chloride comprises carbon tetrachloride.
Claim 16
Dependent Claim
13 words
A method according to claim 11 wherein said last-named chloride comprises silicon tetrachloride.
Claim 17
Dependent Claim
28 words
A method according to claim 7 wherein the titanium halide is reduced by passing the titanium halide through titanium particles at a temperature not less than 700° C.
Claim 18
Dependent Claim
60 words
A method according to claim 7 wherein the substrate is metallic, and wherein, prior to providing the flow of the volatile halide of titanium, the substrate is heated to a temperature above about 600° C. and is subjected to a flow of a gaseous mixture of boron chloride and hydrogen to produce boronization of the outer surface of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-08 | 1981-02-07 | 1981-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-08 | 1985-02-07 | 1985-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-08 | 1989-02-07 | 1989-08-09 | $7700.00 | Window Closed / Lapsed |