US4099999A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making etched-striped substrate planar laser
Assignee: Xerox Corp
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Filing: 1977-06-13
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Granted: 1978-07-11
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Expires: 1997-06-13
Abstract
Abstract A method of making a diode laser in which a pump current confining channel is formed on the substrate side of a diode laser prior to growth of the active or recombination region of the diode laser. The current confining channel is formed by providing, by diffusion, a rectifying junction on a substrate surface and then forming, by etching, a narrow channel completely through a central portion of the diffused layer and the rectifying junction. The remaining layers of the diode laser are then successively grown. The portions of the rectifying junction on both sides of the channel are reverse biased when the primary junction of the diode laser is forward biased whereby pump current flow is confined to a path through the channel.
Inventors
- 👤 Robert D. Burnham
- 👤 Donald R. Scifres
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H10; H10D; H10D62/00; H10D62/10; H10D62/113
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
106 words
A method of making a diode laser comprising the steps of: forming an initial rectifying junction along the surface of a body of substrate semiconductor material of one conductivity type, removing a portion of said substrate material, said portion extending from said surface to beyond said rectifying junction whereby a channel is provided that divides said rectifying junction into two separate portions, filling said channel with semiconductor material of said one conductivity type, and subsequently providing another rectifying junction between layers of semiconductor material, said channel defining the path of pump current flowing across said another rectifying junction when said another rectifying junction is forward biased.
Claim 2
Independent Claim
106 words
A method of making a diode laser comprising the steps of: forming an initial rectifying junction along the surface of a body of substrate semiconductor material of one conductivity type, removing a portion of said substrate material, said portion extending from said surface to beyond said rectifying junction whereby a channel is provided that divides said rectifying junction into two separate portions, filling said channel with semiconductor material of said one conductivity type, and subsequently providing another rectifying junction between layers of semiconductor material, said channel defining the path of pump current flowing across said another rectifying junction when said another rectifying junction is forward biased.
Claim 3
Independent Claim
168 words
A method of making a diode laser having a junction for the injection of minority carriers comprising the steps of: forming in a substrate of semiconductor material of one conductivity type a surface layer of the other conductivity type whereby a rectifying junction is provided in said substrate, removing a portion of said substrate, said portion extending from said surface and through said rectifying junction whereby a channel is provided that extends from said surface to beyond said rectifying junction whereby said rectifying junction is divided into separate rectifying junction portions, and forming upon said substrate surface having said channel a plurality of layers of semiconductor material, at least some of said layers being of materials having different refractive indices and different conductivity types to provide at least one additional rectifying junction between two layers of different conductivity types, said separate rectifying junction portions limiting the travel of pump current to said additional rectifying junction when said additional junction is forward biased to a path through said channel.
Claim 4
Independent Claim
168 words
A method of making a diode laser having a junction for the injection of minority carriers comprising the steps of: forming in a substrate of semiconductor material of one conductivity type a surface layer of the other conductivity type whereby a rectifying junction is provided in said substrate, removing a portion of said substrate, said portion extending from said surface and through said rectifying junction whereby a channel is provided that extends from said surface to beyond said rectifying junction whereby said rectifying junction is divided into separate rectifying junction portions, and forming upon said substrate surface having said channel a plurality of layers of semiconductor material, at least some of said layers being of materials having different refractive indices and different conductivity types to provide at least one additional rectifying junction between two layers of different conductivity types, said separate rectifying junction portions limiting the travel of pump current to said additional rectifying junction when said additional junction is forward biased to a path through said channel.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-10 | 1982-01-09 | 1982-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-10 | 1986-01-09 | 1986-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-10 | 1990-01-09 | 1990-07-11 | $7700.00 | Window Closed / Lapsed |