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US4123989A Expired / Lapsed US ⏱️ 0.0 years remaining

Manufacture of silicon on the inside of a tube

Assignee: Schott Solar CSP Inc
•
Filing: 1977-09-12
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Granted: 1978-11-07
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Expires: 1997-09-12
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Abstract

Abstract A new method and apparatus for producing silicon are disclosed which are characterized by using a silicon tube as the reaction chamber and disproportionating a gaseous silicon compound so as to produce silicon and deposit the same on the inner surface of the reaction chamber.

Inventors

  • 👤 David N. Jewett

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 13:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C01; C01B; C01B33/00; C01B33/02; C23C16/04; C23C16/045; C23C16/44

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 201 words
Apparatus for producing a selected semiconductor material comprising: a muffle; a tube of a selected semiconductor material within said muffle, said tube having first and second opposite ends; means for supporting said tube within said muffle; means surrounding said muffle for heating said tube; heat insulation means surrounding said muffle for substantially preventing loss of heat from said muffle; a supply of a gaseous semiconductor compound containing said selected semiconductor material; first and second end means for closing off the first and second opposite ends respectively of said tube, said first and second end means being adapted to provide an air-tight connection to the ends of said tube, said first end means including first and second concentric conduits for feeding said semiconductor compound and hydrogen into the first end of said tube, said first conduit communicating directly with the interior of said tube near the center thereof, and said second conduit communicating with the interior of said tube via several discharge ports which are in said first end means and are located so as to discharge gas into the reaction chamber; and means connected to said second end mens for removing any unreacted portion of said semiconductor compound from said tube.
Claim 2
Dependent Claim 201 words
Apparatus for producing a selected semiconductor material comprising: a muffle; a tube of a selected semiconductor material within said muffle, said tube having first and second opposite ends; means for supporting said tube within said muffle; means surrounding said muffle for heating said tube; heat insulation means surrounding said muffle for substantially preventing loss of heat from said muffle; a supply of a gaseous semiconductor compound containing said selected semiconductor material; first and second end means for closing off the first and second opposite ends respectively of said tube, said first and second end means being adapted to provide an air-tight connection to the ends of said tube, said first end means including first and second concentric conduits for feeding said semiconductor compound and hydrogen into the first end of said tube, said first conduit communicating directly with the interior of said tube near the center thereof, and said second conduit communicating with the interior of said tube via several discharge ports which are in said first end means and are located so as to discharge gas into the reaction chamber; and means connected to said second end mens for removing any unreacted portion of said semiconductor compound from said tube.
Claim 3
Dependent Claim 10 words
Apparatus according to claim 1 wherein said tube is silicon.
Claim 4
Dependent Claim 16 words
Apparatus according to claim 1 further including means for cooling at least said first end means.
Claim 5
Dependent Claim 27 words
Apparatus according to claim 1 including means for introducing an inert fluid medium into said muffle for maintaining an inert environment between said tube and said muffle.
Claim 6
Dependent Claim 20 words
Apparatus according to claim 3 wherein said cooling means comprises means for circulating a water coolant through said end means.

References Cited (Backward Citations)

US3178308A Cited
US4007074A Cited
US3865647A Cited
US3862020A Cited
US3783009A Cited
US3748169A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-11-06 1982-05-08 1982-11-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-11-06 1986-05-08 1986-11-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-11-06 1990-05-08 1990-11-07 $7700.00 Window Closed / Lapsed

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