Patent US4123989A successfully refreshed from Google Patents.
US4123989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of silicon on the inside of a tube
Assignee: Schott Solar CSP Inc
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Filing: 1977-09-12
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Granted: 1978-11-07
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Expires: 1997-09-12
Abstract
Abstract A new method and apparatus for producing silicon are disclosed which are characterized by using a silicon tube as the reaction chamber and disproportionating a gaseous silicon compound so as to produce silicon and deposit the same on the inner surface of the reaction chamber.
Inventors
- 👤 David N. Jewett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:13
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C01; C01B; C01B33/00; C01B33/02; C23C16/04; C23C16/045; C23C16/44
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
201 words
Apparatus for producing a selected semiconductor material comprising: a muffle; a tube of a selected semiconductor material within said muffle, said tube having first and second opposite ends; means for supporting said tube within said muffle; means surrounding said muffle for heating said tube; heat insulation means surrounding said muffle for substantially preventing loss of heat from said muffle; a supply of a gaseous semiconductor compound containing said selected semiconductor material; first and second end means for closing off the first and second opposite ends respectively of said tube, said first and second end means being adapted to provide an air-tight connection to the ends of said tube, said first end means including first and second concentric conduits for feeding said semiconductor compound and hydrogen into the first end of said tube, said first conduit communicating directly with the interior of said tube near the center thereof, and said second conduit communicating with the interior of said tube via several discharge ports which are in said first end means and are located so as to discharge gas into the reaction chamber; and means connected to said second end mens for removing any unreacted portion of said semiconductor compound from said tube.
Claim 2
Dependent Claim
201 words
Apparatus for producing a selected semiconductor material comprising: a muffle; a tube of a selected semiconductor material within said muffle, said tube having first and second opposite ends; means for supporting said tube within said muffle; means surrounding said muffle for heating said tube; heat insulation means surrounding said muffle for substantially preventing loss of heat from said muffle; a supply of a gaseous semiconductor compound containing said selected semiconductor material; first and second end means for closing off the first and second opposite ends respectively of said tube, said first and second end means being adapted to provide an air-tight connection to the ends of said tube, said first end means including first and second concentric conduits for feeding said semiconductor compound and hydrogen into the first end of said tube, said first conduit communicating directly with the interior of said tube near the center thereof, and said second conduit communicating with the interior of said tube via several discharge ports which are in said first end means and are located so as to discharge gas into the reaction chamber; and means connected to said second end mens for removing any unreacted portion of said semiconductor compound from said tube.
Claim 3
Dependent Claim
10 words
Apparatus according to claim 1 wherein said tube is silicon.
Claim 4
Dependent Claim
16 words
Apparatus according to claim 1 further including means for cooling at least said first end means.
Claim 5
Dependent Claim
27 words
Apparatus according to claim 1 including means for introducing an inert fluid medium into said muffle for maintaining an inert environment between said tube and said muffle.
Claim 6
Dependent Claim
20 words
Apparatus according to claim 3 wherein said cooling means comprises means for circulating a water coolant through said end means.
References Cited (Backward Citations)
US3178308A
Cited
US4007074A
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US3865647A
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US3862020A
Cited
US3783009A
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US3748169A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-06 | 1982-05-08 | 1982-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-06 | 1986-05-08 | 1986-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-06 | 1990-05-08 | 1990-11-07 | $7700.00 | Window Closed / Lapsed |