Patent US4131985A successfully refreshed from Google Patents.
US4131985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin silicon devices
Assignee: ITT Inc
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Filing: 1977-06-24
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Granted: 1979-01-02
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Expires: 1997-06-24
Abstract
Abstract This relates to a semiconductor device and method for making same. At least one semiconductor device is formed in a polished silicon slice, and the device is framed by a deep diffusion of boron. The surface of the slice is then coated with a layer of silicon nitride, and a glass ceramic body is bonded to the silicon nitride layer. The device is next isolated by isotropic etching, and the silicon from beneath the device is removed with a selective etch so that metal interconnections can be made to the underside of the device.
Inventors
- 👤 John C. Greenwood
- 👤 John M. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10W; H10W20/00; H10W20/20; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924; Y10S438/973
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
96 words
A method of making a semiconductor structure, comprising: forming at least one semiconductor device on a surface of a polished silicon slice; framing said at least one device with a deep diffusion of boron; bonding a substrate to the surface of the polished silicon slice; isolating said at least one device by isotropic etching of the silicon slice about the boron diffused frame to form an isolating moat; and removing the silicon from beneath said at least one device using selective lateral etching of the silicon slice from the moat so as to expose said device.
Claim 2
Independent Claim
96 words
A method of making a semiconductor structure, comprising: forming at least one semiconductor device on a surface of a polished silicon slice; framing said at least one device with a deep diffusion of boron; bonding a substrate to the surface of the polished silicon slice; isolating said at least one device by isotropic etching of the silicon slice about the boron diffused frame to form an isolating moat; and removing the silicon from beneath said at least one device using selective lateral etching of the silicon slice from the moat so as to expose said device.
Claim 3
Independent Claim
90 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished 111 silicon slice; framing said at least one device with a deep diffusion of boron; bonding a substrate to the surface of the polished silicon slice; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame to form a moat; and removing silicon from beneath said at least one device utilizing selective lateral etching of the 111 silicon slice from the moat.
Claim 4
Independent Claim
90 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished 111 silicon slice; framing said at least one device with a deep diffusion of boron; bonding a substrate to the surface of the polished silicon slice; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame to form a moat; and removing silicon from beneath said at least one device utilizing selective lateral etching of the 111 silicon slice from the moat.
Claim 5
Dependent Claim
37 words
A method as described in claim 1, additionally comprising the step of coating the surface of said slice with a layer of silicon nitride prior to bonding the substrate to the surface of the polished silicon slice.
Claim 6
Dependent Claim
29 words
A method as described in claim 1, additionally comprising the step of forming metal interconnections to the underside of said at least one device after removing the silicon therefrom.
Claim 7
Dependent Claim
29 words
A method as described in claim 2, additionally comprising the step of forming metal interconnections to the underside of said at least one device after removing the silicon therefrom.
Claim 8
Dependent Claim
34 words
A method as described in claim 2, additionally including the step of coating the surface with a layer of silicon nitride prior to bonding the substrate to the surface of the polished silicon slice.
Claim 9
Dependent Claim
33 words
A method as described in claim 2, additionally comprising the step of forming polycrystalline silicon interconnectors to said device prior to framing said at least one device with a deep diffusion of boron.
Claim 10
Independent Claim
108 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished silicon slice; framing said at least one device with a deep diffusion of boron; coating the surface of said slice with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching; and removing the silicon from beneath said at least one device with a selective etch so as to expose said device.
Claim 11
Independent Claim
108 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished silicon slice; framing said at least one device with a deep diffusion of boron; coating the surface of said slice with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching; and removing the silicon from beneath said at least one device with a selective etch so as to expose said device.
Claim 12
Independent Claim
127 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished 111 silicon slice; forming polycrystalline silicon interconnectors to said device; framing said at least one device with a deep diffusion of boron; coating said surface with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame; removing silicon from beneath said at least one device with a selective etch; and forming metal interconnections to the underside of said at least one device.
Claim 13
Independent Claim
127 words
A method of making a semiconductor structure including: forming at least one semiconductor device in the surface of a polished 111 silicon slice; forming polycrystalline silicon interconnectors to said device; framing said at least one device with a deep diffusion of boron; coating said surface with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame; removing silicon from beneath said at least one device with a selective etch; and forming metal interconnections to the underside of said at least one device.
Claim 14
Independent Claim
108 words
A method of making a semiconductor structure including: forming at least one semiconductor device on the surface of a polished 111 silicon slice; framing said at least one device with a deep diffusion of boron; coating said surface with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame; and removing silicon from beneath said at least one device with a selective etch.
Claim 15
Independent Claim
108 words
A method of making a semiconductor structure including: forming at least one semiconductor device on the surface of a polished 111 silicon slice; framing said at least one device with a deep diffusion of boron; coating said surface with a layer of silicon nitride; fusing the surface of said slice by way of said silicon nitride layer to a glass ceramic material in its glass phase; devitrifying said glass ceramic material to form a ceramic layer; isolating said at least one device by isotropic etching of said silicon slice around the boron diffused frame; and removing silicon from beneath said at least one device with a selective etch.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-01 | 1982-07-03 | 1983-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-01 | 1986-07-03 | 1987-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-01 | 1990-07-03 | 1991-01-02 | $7700.00 | Window Closed / Lapsed |