Patent US4144094A successfully refreshed from Google Patents.
US4144094A
Expired / Lapsed
US
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Radiation responsive current generating cell and method of forming same
Assignee: Motorola Solutions Inc
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Filing: 1976-11-29
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Granted: 1979-03-13
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Expires: 1996-11-29
Abstract
Abstract A semiconductor cell for generating current in response to incident radiation, particularly solar energy, wherein a layer of material having charges is disposed over the PN current generating junction. The layer having charges possesses a net bound charge of the same polarity as the minority carriers associated with the underlying semiconductor material for aiding minority carrier flow across the PN junction and for minimizing recombination of those minority carriers at the surface of the semiconductor body.
Inventors
- 👤 Michael G. Coleman
- 👤 Lawrence A. Grenon
- 👤 Robert A. Pryor
- 👤 Fabio Restrepo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:56
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/14; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
132 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type diffused into a portion of said first region for forming a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface.
Claim 2
Dependent Claim
132 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type diffused into a portion of said first region for forming a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface.
Claim 3
Dependent Claim
38 words
A cell for generating current in response to incident radiation as in claim 1 further comprising: (a) contact means connected to said body for receiving the generated current in response to incident radiation passing through said third region.
Claim 4
Dependent Claim
24 words
A cell for generating current in response to incident radiation as in claim 2 wherein: (a) said first and second regions comprise silicon material.
Claim 5
Dependent Claim
45 words
A cell for generating current in response to incident radiation as in claim 1 wherein: (a) said first region comprises a P conductivity semiconductor material and said second region comprises an N conductivity semiconductor material, and (b) said third region of material includes positive ions.
Claim 6
Dependent Claim
26 words
A cell for generating current in response to incident radiation as in claim 1 wherein: (a) said third region of material comprises an oxide of silicon.
Claim 7
Dependent Claim
28 words
A cell for generating current in response to incident radiation as in claim 1 wherein: (a) said third region of material comprises a nitride or oxynitride of silicon.
Claim 8
Dependent Claim
160 words
A cell for generating current in response to incident radiation comprising: a body including a first region of a flat conductivity type, a second region of opposite conductivity type diffused into a portion of said first region for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises an N conductivity semiconductor material and said second region comprises a P conductivity semiconductor material, and said third region of material includes negative ions.
Claim 9
Dependent Claim
160 words
A cell for generating current in response to incident radiation comprising: a body including a first region of a flat conductivity type, a second region of opposite conductivity type diffused into a portion of said first region for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises an N conductivity semiconductor material and said second region comprises a P conductivity semiconductor material, and said third region of material includes negative ions.
Claim 10
Dependent Claim
160 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises a P conductivity semiconductor material and said second region comprises an N conductivity semiconductor material, and said third region of material includes positive ions, and [a)] said PN junction comprises a heterojunction.
Claim 11
Dependent Claim
160 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises a P conductivity semiconductor material and said second region comprises an N conductivity semiconductor material, and said third region of material includes positive ions, and [a)] said PN junction comprises a heterojunction.
Claim 12
Dependent Claim
160 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises an N conductivity semiconductor material and said second region comprises a P conductivity semiconductor material, and said third region of material includes positive ions, and [a)] said PN junction comprises a heterojunction.
Claim 13
Dependent Claim
160 words
A cell for generating current in response to incident radiation, comprising: a body including a first region of a first conductivity type, a second region of opposite conductivity type for defining a PN junction; and a third region disposed over said second region and said third region being of a different material than said second region and comprising a material being substantially transparent to the incident radiation, and said third region comprising dopants for providing, absent the application of an external voltage potential to said third region, ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface, said first region comprises an N conductivity semiconductor material and said second region comprises a P conductivity semiconductor material, and said third region of material includes positive ions, and [a)] said PN junction comprises a heterojunction.
Claim 14
Independent Claim
124 words
A method for forming a cell for generating current in response to incident radiation, comprising: providing a body including a first region of a first conductivity type, diffusing a portion of said body to form a second region of opposite conductivity within said first region for forming a PN junction; and forming a third region over said second region of a different material than said second region and comprising a material being substantially transparent to the incident radiation; and introducing into said third region dopants for providing ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface.
Claim 15
Independent Claim
124 words
A method for forming a cell for generating current in response to incident radiation, comprising: providing a body including a first region of a first conductivity type, diffusing a portion of said body to form a second region of opposite conductivity within said first region for forming a PN junction; and forming a third region over said second region of a different material than said second region and comprising a material being substantially transparent to the incident radiation; and introducing into said third region dopants for providing ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface.
Claim 16
Dependent Claim
39 words
A method for forming a cell for generating current in response to incident radiation as in claim 10 including the step of: (a) forming said third region by depositing a layer of material containing charges over said second region.
Claim 17
Dependent Claim
47 words
A method for forming a cell for generating current in response to incident radiation as in claim 11 further comprising the step of: (a) forming contact means to said body for receiving the generated current in response to incident radiation passing through said third region of material.
Claim 18
Dependent Claim
54 words
A method for forming a cell for generating current in response to incident radiation as in claim 11 including the steps of: (a) forming said first region of a P conductivity semiconductor material and said second region of an N conductivity semiconductor material, and (b) forming said third region of material with positive ions.
Claim 19
Independent Claim
162 words
A method for forming a cell for generating current in response to incident radiation, comprising: providing a body including a first region of a first conductivity type, a second region of opposite conductivity diffused into said first region for forming a PN junction; and forming a third region over said second region of a different material than said second region and comprising a material being substantially transparent to the incident radiation; introducing into said third region dopants for providing ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface; forming said third region by depositing a layer of material containing charges over said second region; [a)] forming said first region of an N conductivity semiconductor material and said second region of a P conductivity semiconductor material; and [b)] forming said third region with negative ions.
Claim 20
Independent Claim
162 words
A method for forming a cell for generating current in response to incident radiation, comprising: providing a body including a first region of a first conductivity type, a second region of opposite conductivity diffused into said first region for forming a PN junction; and forming a third region over said second region of a different material than said second region and comprising a material being substantially transparent to the incident radiation; introducing into said third region dopants for providing ions of the same polarity as the minority carriers associated with said second region for aiding minority carrier flow across said PN junction and for minimizing recombination of second region minority carriers at a second region surface; forming said third region by depositing a layer of material containing charges over said second region; [a)] forming said first region of an N conductivity semiconductor material and said second region of a P conductivity semiconductor material; and [b)] forming said third region with negative ions.
Claim 21
Dependent Claim
141 words
A radiation responsive current generating cell, comprising: a substrate formed of a first material of a first type conductivity; a second material of a second type conductivity and being formed as an epitaxial layer on the substrate so that a PN junction is formed therebetween; a third material formed as a layer on the second material, the third material having dopants which causes an equilibrium electric field between the second and third materials which assists flow of minority carriers from the second material to the substrate when electron-hole pairs are generated by incident radiation upon the cell; at least one conductor extending through the third material and making contact with the second material; and a second conductor in contact with the substrate so that the at least one conductor and the second conductor serve as current carrying terminals for the cell.
Claim 22
Dependent Claim
141 words
A radiation responsive current generating cell, comprising: a substrate formed of a first material of a first type conductivity; a second material of a second type conductivity and being formed as an epitaxial layer on the substrate so that a PN junction is formed therebetween; a third material formed as a layer on the second material, the third material having dopants which causes an equilibrium electric field between the second and third materials which assists flow of minority carriers from the second material to the substrate when electron-hole pairs are generated by incident radiation upon the cell; at least one conductor extending through the third material and making contact with the second material; and a second conductor in contact with the substrate so that the at least one conductor and the second conductor serve as current carrying terminals for the cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-12 | 1982-09-11 | 1983-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-12 | 1986-09-11 | 1987-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-12 | 1990-09-11 | 1991-03-13 | $7700.00 | Window Closed / Lapsed |