Radiation sensitive device with lateral current

Claim 2

A radiation sensitive solid state device comprising in combination: a semiconductor layer of one conductivity type; a radiation sensitive element present in the semiconductor layer comprising an electrode situated at or adjacent a first surface and forming a rectifying junction with the semiconductor layer material of the one conductivity type; a first connection of the semiconductor layer; a second connection of the semiconductor layer spaced apart laterally from the first connection on the opposite side of the radiation sensitive element wherein the semiconductor layer portion situated intermediate said connections forms a low resistance path having a thickness measured from the radiation sensitive element to the edge opposite the radiation sensitive element between roughly about six microns and roughly about seven microns whereby a substantially lateral flow of charge carriers characteristic of the one conductivity type can occur; and a connection of the radiation sensitive element.

Claim 3

A radiation sensitive solid state device according to claim 1 wherein the electrode consists of a surface region of the opposite conductivity type in the semiconductor layer of the one conductivity type.

Claim 4

A radiation sensitive solid state device according to claim 2 wherein the semiconductor layer of the one conductivity type is present on a semiconductor substrate of the opposite conductivity type, the first surface of the semiconductor layer being the surface remote from the substrate.

Claim 5

A radiation sensitive solid state device according to claim 3 consisting of a photodiode wherein the semiconductor layer of one conductivity type is an N-type layer and the radiation sensitive element is a P-type element.

Claim 6

A radiation sensitive solid state device comprising in combination: a semiconductor layer of one conductivity type; a radiation sensitive element present in the semiconductor layer comprising an electrode situated at or adjacent a first surface and forming a rectifying junction with the semiconductor layer material of the one conductivity type; a first connection of the semiconductor layer; a second connection of the semiconductor layer spaced apart laterally from the first connection on the opposite side of the radiation sensitive element wherein the semiconductor layer portion situated intermediate said connections forms a low resistance path having a thickness measured from the radiation sensitive element to the edge opposite the radiation sensitive element of at least roughly about six microns whereby a substantially lateral flow of charge carriers characteristic of the one conductivity type can occur; and a connection of the radiation sensitive element.

Claim 7

A radiation sensitive solid state device comprising in combination: a semiconductor layer of one conductivity type; a radiation sensitive element present in the semiconductor layer comprising an electrode situated at or adjacent a first surface and forming a rectifying junction with the semiconductor layer material of the one conductivity type; a first connection of the semiconductor layer; a second connection of the semiconductor layer spaced apart laterally from the first connection on the opposite side of the radiation sensitive element wherein the semiconductor layer portion situated intermediate said connections forms a low resistance path having a thickness measured from the radiation sensitive element to the edge opposite the radiation sensitive element of at least roughly about six microns whereby a substantially lateral flow of charge carriers characteristic of the one conductivity type can occur; and a connection of the radiation sensitive element.

Claim 8

A radiation sensitive solid state device according to claim 5 wherein the electrode consists of a surface region of the opposite conductivity type in the semiconductor layer of the one conductivity type.

Claim 9

A radiation sensitive solid state device according to claim 6 wherein the semiconductor layer of the one conductivity type is present on a semiconductor substrate of the opposite conductivity type, the first surface of the semiconductor layer being the surface remote from the substrate.

Claim 10

A radiation sensitive solid state device according to claim 7 consisting of a photodiode wherein the semiconductor layer of one conductivity type is an N-type layer and the radiation sensitive element is a P-type element.

Claim 13

A method according to claim 9 wherein the substantially lateral flow of carriers creates a bias current in the range of from roughly about 11/2 the maximum radiation generated current to roughly about 21/2 times the maximum radiation generated current.

Claim 14

A radiation sensitive solid state device circuit comprising in combination: a radiation sensitive solid state device having a semiconductor layer of one conductivity type and a radiation sensitive element present in the semiconductor layer comprising an electrode situated at or adjacent a first surface and forming a rectifying junction with the semiconductor layer material of the first conductivity type wherein the semiconductor layer forms a low resistance substantially lateral path beneath the radiation sensitive element; a first current splitter to split a current into two currents of a known ratio to one another, the two currents being a substantially lateral bias current input to the semiconductor layer of the first conductivity type and a second current; a second current splitter to split the second current into two currents of a known ratio to one another, one of the two currents being a comparison current; a comparison circuit to compare the current output from the semiconductor layer to the comparison current, the comparison circuit having one output state for when the current output from the semiconductor layer substantially equals the current input to the semiconductor layer and a second output when the current output from the semiconductor layer substantially differs from the current input to the semiconductor layer.

Claim 15

A radiation sensitive solid state device circuit comprising in combination: a radiation sensitive solid state device having a semiconductor layer of one conductivity type and a radiation sensitive element present in the semiconductor layer comprising an electrode situated at or adjacent a first surface and forming a rectifying junction with the semiconductor layer material of the first conductivity type wherein the semiconductor layer forms a low resistance substantially lateral path beneath the radiation sensitive element; a first current splitter to split a current into two currents of a known ratio to one another, the two currents being a substantially lateral bias current input to the semiconductor layer of the first conductivity type and a second current; a second current splitter to split the second current into two currents of a known ratio to one another, one of the two currents being a comparison current; a comparison circuit to compare the current output from the semiconductor layer to the comparison current, the comparison circuit having one output state for when the current output from the semiconductor layer substantially equals the current input to the semiconductor layer and a second output when the current output from the semiconductor layer substantially differs from the current input to the semiconductor layer.

Claim 16

A radiation sensitive solid state device circuit according to claim 11 wherein the ratio of the first current splitter is 1, the ratio of the second current splitter is 1, and the comparison circuit subtracts a current substantially equal to a constant times the comparison current from a current substantially equal to the same constant times the current output from the semiconductor layer.