US4253023A
Expired / Lapsed
US
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Radiation detection system using semiconductor detector with differential carrier trapping and mobility
Assignee: United States Department of Energy
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Filing: 1979-04-13
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Granted: 1981-02-24
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Expires: 1999-04-13
Abstract
Abstract A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI 2 , which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.
Inventors
- 👤 Richard C. Whited
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:19
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/24; G01T1/247
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
In a system for measuring nuclear radiation utilizing a semiconductor detector, the apparatus comprising: (a) a first means electrically connected to said detector for producing an output representative of the total charge given up by said detector in response to a radiation event therewithin, (b) a second means electrically connected to said detector for producing an output representative of the contribution of one of the charge carriers to said total charge given up, and (c) means for processing the outputs of said first and second means for obtaining a measure of the total charge produced within said detector in response to said radiation event.
Claim 2
Dependent Claim
104 words
In a system for measuring nuclear radiation utilizing a semiconductor detector, the apparatus comprising: (a) a first means electrically connected to said detector for producing an output representative of the total charge given up by said detector in response to a radiation event therewithin, (b) a second means electrically connected to said detector for producing an output representative of the contribution of one of the charge carriers to said total charge given up, and (c) means for processing the outputs of said first and second means for obtaining a measure of the total charge produced within said detector in response to said radiation event.
Claim 3
Dependent Claim
18 words
The apparatus of claim 1 wherein said detector comprises at least a portion of a HgI 2 crystal.
Claim 4
Dependent Claim
15 words
The apparatus according to claim 1 wherein said detector exhibits differential carrier mobility and trapping.
Claim 5
Dependent Claim
21 words
The apparatus of claim 3 wherein said detector is a slice of a HgI 2 crystal thicker than about 1 mm.
Claim 6
Independent Claim
76 words
A method for measuring nuclear radiation utilizing a semiconductor detector comprising: (a) measuring the total charge given up by said detector in response to a radiation event therewithin, (b) measuring the contribution of one of the charge carriers to said total charge given up, and (c) processing said measured total charge given up and one charge carrier contribution to obtain a measure of the total charge produced within said detector in response to said radiation event.
Claim 7
Independent Claim
76 words
A method for measuring nuclear radiation utilizing a semiconductor detector comprising: (a) measuring the total charge given up by said detector in response to a radiation event therewithin, (b) measuring the contribution of one of the charge carriers to said total charge given up, and (c) processing said measured total charge given up and one charge carrier contribution to obtain a measure of the total charge produced within said detector in response to said radiation event.
Claim 8
Dependent Claim
18 words
The method of claim 5 wherein said detector comprises at least a portion of a HgI 2 crystal.
Claim 9
Dependent Claim
15 words
The method according to claim 5 wherein said detector exhibits differential carrier mobility and trapping.
Claim 10
Dependent Claim
21 words
The method of claim 7 wherein said detector is a slice of a HgI 2 crystal thicker than about 1 mm.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |