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US4253023A Expired / Lapsed US ⏱️ 0.0 years remaining

Radiation detection system using semiconductor detector with differential carrier trapping and mobility

Assignee: United States Department of Energy
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Filing: 1979-04-13
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Granted: 1981-02-24
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Expires: 1999-04-13
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Abstract

Abstract A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI 2 , which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Inventors

  • 👤 Richard C. Whited

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 13:04
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/24; G01T1/247

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 104 words
In a system for measuring nuclear radiation utilizing a semiconductor detector, the apparatus comprising: (a) a first means electrically connected to said detector for producing an output representative of the total charge given up by said detector in response to a radiation event therewithin, (b) a second means electrically connected to said detector for producing an output representative of the contribution of one of the charge carriers to said total charge given up, and (c) means for processing the outputs of said first and second means for obtaining a measure of the total charge produced within said detector in response to said radiation event.
Claim 2
Dependent Claim 104 words
In a system for measuring nuclear radiation utilizing a semiconductor detector, the apparatus comprising: (a) a first means electrically connected to said detector for producing an output representative of the total charge given up by said detector in response to a radiation event therewithin, (b) a second means electrically connected to said detector for producing an output representative of the contribution of one of the charge carriers to said total charge given up, and (c) means for processing the outputs of said first and second means for obtaining a measure of the total charge produced within said detector in response to said radiation event.
Claim 3
Dependent Claim 18 words
The apparatus of claim 1 wherein said detector comprises at least a portion of a HgI 2 crystal.
Claim 4
Dependent Claim 15 words
The apparatus according to claim 1 wherein said detector exhibits differential carrier mobility and trapping.
Claim 5
Dependent Claim 21 words
The apparatus of claim 3 wherein said detector is a slice of a HgI 2 crystal thicker than about 1 mm.
Claim 6
Independent Claim 76 words
A method for measuring nuclear radiation utilizing a semiconductor detector comprising: (a) measuring the total charge given up by said detector in response to a radiation event therewithin, (b) measuring the contribution of one of the charge carriers to said total charge given up, and (c) processing said measured total charge given up and one charge carrier contribution to obtain a measure of the total charge produced within said detector in response to said radiation event.
Claim 7
Independent Claim 76 words
A method for measuring nuclear radiation utilizing a semiconductor detector comprising: (a) measuring the total charge given up by said detector in response to a radiation event therewithin, (b) measuring the contribution of one of the charge carriers to said total charge given up, and (c) processing said measured total charge given up and one charge carrier contribution to obtain a measure of the total charge produced within said detector in response to said radiation event.
Claim 8
Dependent Claim 18 words
The method of claim 5 wherein said detector comprises at least a portion of a HgI 2 crystal.
Claim 9
Dependent Claim 15 words
The method according to claim 5 wherein said detector exhibits differential carrier mobility and trapping.
Claim 10
Dependent Claim 21 words
The method of claim 7 wherein said detector is a slice of a HgI 2 crystal thicker than about 1 mm.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-02-24 1984-08-25 1985-02-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-02-24 1988-08-25 1989-02-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-02-24 1992-08-25 1993-02-24 $7700.00 Window Closed / Lapsed

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