Patent US4313125A successfully refreshed from Google Patents.
US4313125A
Expired / Lapsed
US
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Light emitting semiconductor devices
Assignee: AT&T Inc
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Filing: 1979-06-21
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Granted: 1982-01-26
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Expires: 1999-06-21
Abstract
Abstract A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure.
Inventors
- 👤 Robert L. Hartman
- 👤 Louis A. Koszi
- 👤 Norman E. Schumaker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 21:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/30; H01S5/32; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01S5/2004; H01S5/305; H01S5/323; H01S5/32308
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
47 words
In a semiconductor light emitting diode, a semiconductor body comprising: an active region bounded in part by at least two isotype heterojunctions; and a p-n junction located entirely exterior to, and entirely noncontiguous with said active region, but adapted to inject minority carriers therein when forward biased.
Claim 2
Dependent Claim
47 words
In a semiconductor light emitting diode, a semiconductor body comprising: an active region bounded in part by at least two isotype heterojunctions; and a p-n junction located entirely exterior to, and entirely noncontiguous with said active region, but adapted to inject minority carriers therein when forward biased.
Claim 3
Dependent Claim
12 words
The device of claim 1 wherein said active region is doped p-type.
Claim 4
Dependent Claim
13 words
The device of claim 1 wherein said semiconductor body is aluminum gallium arsenide.
Claim 5
Dependent Claim
25 words
The device of claim 1 wherein the distance from said p-n junction to said active region is less than the diffusion length of minority carriers.
Claim 6
Dependent Claim
66 words
The device of claim 1 wherein: said active region comprises Al y Ga 1-y As (0≦y≦0.1); one of said isotype heterojunctions is an interface between said active region and a first cladding layering comprising Al w Ga 1-w As (0.24≦w≦0.36); and the other of said isotype heterojunctions is an interface between said active region and a second cladding layer comprising Al z Ga 1-z As (0.24≦z≦0.36).
Claim 7
Dependent Claim
35 words
The device of claim 5 wherein said p-n junction is contiguous with one of said cladding layers and is a distance in the range of about 0.2 μm to 0.3 μm from said active region.
Claim 8
Dependent Claim
27 words
The device of claim 1 wherein said active region is a stripe geometry active region, whereby said light emitting diode exhibits a reduced nonradiative interface recombination current.
Claim 9
Dependent Claim
17 words
The device of claim 1 further including electrode means attached to said body to provide said bias.
Claim 10
Dependent Claim
86 words
In a semiconductor light-emitting diode, a semiconductor body comprising: first and second relatively wide bandgap cladding regions, a relatively narrower bandgap active region bounded in part by at least first and second isotype heterojunctions formed between said active region and said first and second cladding regions, respectively, and a p-n junction located entirely exterior to, and entirely noncontiguous with, said active region, but adapted to inject minority carriers therein when under forward bias; said heterojunctions being adapted to confine said charge carriers to said active region.
Claim 11
Dependent Claim
86 words
In a semiconductor light-emitting diode, a semiconductor body comprising: first and second relatively wide bandgap cladding regions, a relatively narrower bandgap active region bounded in part by at least first and second isotype heterojunctions formed between said active region and said first and second cladding regions, respectively, and a p-n junction located entirely exterior to, and entirely noncontiguous with, said active region, but adapted to inject minority carriers therein when under forward bias; said heterojunctions being adapted to confine said charge carriers to said active region.
References Cited (Backward Citations)
US4184170A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-01-25 | 1985-07-27 | 1986-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-01-25 | 1989-07-27 | 1990-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-01-25 | 1993-07-27 | 1994-01-26 | $7700.00 | Window Closed / Lapsed |