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Patent US4319262A successfully refreshed from Google Patents.
US4319262A
Expired / Lapsed
US
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Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode
Assignee: STMicroelectronics SRL
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Filing: 1980-02-12
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Granted: 1982-03-09
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Expires: 2000-02-12
Abstract
Abstract A lateral PNP transistor with concentric p-doped emitter and collector diffusion zones in an n-doped base layer epitaxially grown on a p-type silicon substrate, covered by a layer of silicon oxide, has emitter and collector electrodes in the form of metallic patches on the oxide layer overlying the respective diffusion zones and penetrating the oxide at limited contact areas. The metallic patches extend above an annular base-layer portion separating the two diffusion zones and symmetrically approach a circular centerline of this annular portion in order to guard against punch-through upon accidental polarity reversal of the collector/emitter voltage. A narrow peripheral gap in the collector electrode is traversed by an elongate metal strip which forms a radial extension of the emitter electrode leading to a supply terminal, the spacing of that strip from the gap edges substantially equaling the radial distance between the confronting peripheral boundaries of the two patches. If the diffusion zone of the collector is peripherally continuous instead of being interrupted in the region of the gap of the overlying electrode, the gap is bridged by a stratum of p-doped polycrystalline silicon embedded in the oxide layer and in conductive contact with the collector electrode on opposite sides of the gap, this stratum having an edge complementing the inner boundary of the metallic collector patch to a full circle around the emitter patch.
Inventors
- 👤 Franco Bertotti
- 👤 Vincenzo Prestileo
- 👤 Mario Foroni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:03
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D10/00; H10D10/60; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
331 words
A lateral transistor forming part of an integrated semiconductor structure which includes a monocrystalline silicon substrate of p-type conductivity, an epitaxial silicon layer of n-type conductivity on said substrate and an oxide layer overlying said epitaxial layer, comprising: a p-doped inner diffusion zone in said epitaxial layer forming an emitter region immediately below said oxide layer; a p-doped outer diffusion zone in said epitaxial layer forming a collector region in the form of a closed ring spacedly surrounding said emitter region immediately below said oxide layer, said emitter and collector regions being separated by a base region of substantially constant width forming part of said epitaxial layer; a first conductive patch on said oxide layer forming an emitter electrode overlying said inner diffusion zone in conductive contact therewith and therebeyond above an adjoining inner peripheral area of said base region; a second conductive patch on said oxide layer forming a collector electrode overlying said outer diffusion zone in conductive contact therewith and therebeyond above an adjoining outer peripheral area of said base region, said second patch concentrically surrounding said first patch except for a peripheral gap, said patches having confronting boundaries spaced apart by a substantially uniform distance significantly smaller then the width of said base region; a third conductive patch on said oxide layer forming a base electrode overlying said epitaxial layer in conductive contact therewith at a location outside said second patch; conductor means extending from said patches to an external circuit, said conductor means including a strip of conductor material extending from said first patch on said oxide layer through said gap with a separation from the gap edges substantially corresponding to the distance between said confronting boundaries; and a conductive stratum embedded in said oxide layer and bridging said gap while approaching the periphery of said first patch with a spacing therefrom substantially corresponding to the distance between said confronting boundaries, said stratum being in conductive contact with said second patch on opposite sides of said gap.
Claim 2
Dependent Claim
331 words
A lateral transistor forming part of an integrated semiconductor structure which includes a monocrystalline silicon substrate of p-type conductivity, an epitaxial silicon layer of n-type conductivity on said substrate and an oxide layer overlying said epitaxial layer, comprising: a p-doped inner diffusion zone in said epitaxial layer forming an emitter region immediately below said oxide layer; a p-doped outer diffusion zone in said epitaxial layer forming a collector region in the form of a closed ring spacedly surrounding said emitter region immediately below said oxide layer, said emitter and collector regions being separated by a base region of substantially constant width forming part of said epitaxial layer; a first conductive patch on said oxide layer forming an emitter electrode overlying said inner diffusion zone in conductive contact therewith and therebeyond above an adjoining inner peripheral area of said base region; a second conductive patch on said oxide layer forming a collector electrode overlying said outer diffusion zone in conductive contact therewith and therebeyond above an adjoining outer peripheral area of said base region, said second patch concentrically surrounding said first patch except for a peripheral gap, said patches having confronting boundaries spaced apart by a substantially uniform distance significantly smaller then the width of said base region; a third conductive patch on said oxide layer forming a base electrode overlying said epitaxial layer in conductive contact therewith at a location outside said second patch; conductor means extending from said patches to an external circuit, said conductor means including a strip of conductor material extending from said first patch on said oxide layer through said gap with a separation from the gap edges substantially corresponding to the distance between said confronting boundaries; and a conductive stratum embedded in said oxide layer and bridging said gap while approaching the periphery of said first patch with a spacing therefrom substantially corresponding to the distance between said confronting boundaries, said stratum being in conductive contact with said second patch on opposite sides of said gap.
Claim 3
Dependent Claim
236 words
A lateral transistor forming part of an integrated semiconductor structure which includes a monocrystalline silicon substrate of p-type conductivity, an epitaxial silicon layer of n-type conductivity on said substrate and an oxide layer overlying said epitaxial layer, comprising: a p-doped inner diffusion zone in said epitaxial layer forming an emitter region immediately below said oxide layer; a p-doped outer diffusion zone in said epitaxial layer forming a collector region spacedly surrounding said emitter region immediately below said oxide layer, said emitter and collector regions being separated by a base region of substantially constant width forming part of said epitaxial layer; a first conductive patch on said oxide layer forming an emitter electrode overlying said inner diffusion zone in conductive contact therewith and therebeyond above an adjoining inner peripheral area of said base region; a second conductive patch on said oxide layer forming a collector electrode overlying said outer diffusion zone in conductive contact therewith and therebeyond above an adjoining outer peripheral area of said base region, said patches having confronting boundaries substantially equispaced from a centerline of said base region and spaced apart by a substantially uniform distance of less than half the width of said base region; a third conductive patch on said oxide layer forming a base electrode overlying said epitaxial layer in conductive contact therewith at a location outside said second patch; and conductor means extending from said patches to an external circuit.
Claim 4
Dependent Claim
236 words
A lateral transistor forming part of an integrated semiconductor structure which includes a monocrystalline silicon substrate of p-type conductivity, an epitaxial silicon layer of n-type conductivity on said substrate and an oxide layer overlying said epitaxial layer, comprising: a p-doped inner diffusion zone in said epitaxial layer forming an emitter region immediately below said oxide layer; a p-doped outer diffusion zone in said epitaxial layer forming a collector region spacedly surrounding said emitter region immediately below said oxide layer, said emitter and collector regions being separated by a base region of substantially constant width forming part of said epitaxial layer; a first conductive patch on said oxide layer forming an emitter electrode overlying said inner diffusion zone in conductive contact therewith and therebeyond above an adjoining inner peripheral area of said base region; a second conductive patch on said oxide layer forming a collector electrode overlying said outer diffusion zone in conductive contact therewith and therebeyond above an adjoining outer peripheral area of said base region, said patches having confronting boundaries substantially equispaced from a centerline of said base region and spaced apart by a substantially uniform distance of less than half the width of said base region; a third conductive patch on said oxide layer forming a base electrode overlying said epitaxial layer in conductive contact therewith at a location outside said second patch; and conductor means extending from said patches to an external circuit.
Claim 5
Dependent Claim
59 words
A PNP transistor as defined in claim 2 wherein said second patch concentrically surrounds said first patch except for a peripheral gap, said conductor means including a strip of conductor material extending from said first patch on said oxide layer through said gap with a separation from the gap edges substantially corresponding to the distance between said confronting boundaries.
Claim 6
Dependent Claim
24 words
A PNP transistor as defined in claim 3 wherein said collector region is interrupted underneath said gap over a distance exceeding the gap width.
Claim 7
Dependent Claim
71 words
A PNP transistor as defined in claim 3 wherein said collector region forms a closed ring around said emitter region, further comprising a conductive stratum embedded in said oxide layer and bridging said gap while approaching the periphery of said first patch with a spacing therefrom substantially corresponding to the distance between said confronting boundaries, said stratum being in conductive contact with said second patch on opposite sides of said gap.
Claim 8
Dependent Claim
22 words
A PNP transistor as defined in claim 5 or 1 wherein said patches are metallic, said stratum consisting of p-doped polycrystalline silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-08 | 1985-09-07 | 1986-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-08 | 1989-09-07 | 1990-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-08 | 1993-09-07 | 1994-03-09 | $7700.00 | Window Closed / Lapsed |