Patent US4375085A successfully refreshed from Google Patents.
US4375085A
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Dense electrically alterable read only memory
Assignee: International Business Machines Corp
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Filing: 1981-01-02
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Granted: 1983-02-22
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Expires: 2001-01-02
Abstract
Abstract This invention provides an improved electrically alterable read only memory system which includes a semiconductor substrate having a diffusion region therein defining one end of a channel region, a control plate, a floating plate separated from the channel region by a thin dielectric layer and disposed between the control plate and the channel region and means for transferring charge to and from the floating plate. A control gate is coupled to the channel region and is located between the diffusion region and the floating plate. The control gate may be connected to a word line and the diffusion region may be connected to a hit/sense line. The channel region is controlled by the word line and the presence or absence of charge on the floating plate. Thus, information may be read from a cell of the memory by detecting the presence or absence of charge stored in the inversion capacitor under the floating plate. The charge transfer means includes an enhanced conduction insulator and means for applying appropriate voltages to the control plate and to the control gate to transfer charge to and from the floating plate through the enhanced conduction insulator.
Inventors
- 👤 Gary D. Grise
- 👤 Ning Hsieh
- 👤 Howard L. Kalter
- 👤 Chung H. Lam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:32
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
95 words
A memory comprising; a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, means for selectively charging said floating plate to form an inversion capacitor in said channel region, means for supplying charge to said inversion capacitor, and means for detecting the charge in said inversion capacitor.
Claim 2
Dependent Claim
95 words
A memory comprising; a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, means for selectively charging said floating plate to form an inversion capacitor in said channel region, means for supplying charge to said inversion capacitor, and means for detecting the charge in said inversion capacitor.
Claim 3
Dependent Claim
23 words
A memory as set forth in claim 1 further including an enhanced conduction insulator disposed between said control plate and said channel region.
Claim 4
Dependent Claim
41 words
A memory as set forth in claim 2 wherein the capacitance of the capacitor formed by said floating plate and said semiconductor substrate is substantially larger than the capacitance of the capacitor formed by said floating plate and said control plate.
Claim 5
Dependent Claim
23 words
A memory as set forth in claim 3 wherein said enhanced conduction insulator is disposed between said floating plate and said control plate.
Claim 6
Dependent Claim
30 words
A memory as set forth in claim 2 wherein said floating plate charging means includes means for applying voltages to said control plate and to said second conductivity type region.
Claim 7
Dependent Claim
20 words
A memory as set forth in claim 5 wherein said detecting means is connected to said second conductivity type region.
Claim 8
Dependent Claim
127 words
A memory comprising; a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, a dual electron injector structure disposed between said control plate and said floating plate, a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, means for selectively charging said floating plate to form an inversion capacitor in said channel region, said means including means for applying voltages to said control plate and to said second conductivity type region, means for supplying charge to said inversion capacitor, and means for detecting the charge in said inversion capacitor.
Claim 9
Dependent Claim
127 words
A memory comprising; a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, a dual electron injector structure disposed between said control plate and said floating plate, a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, means for selectively charging said floating plate to form an inversion capacitor in said channel region, said means including means for applying voltages to said control plate and to said second conductivity type region, means for supplying charge to said inversion capacitor, and means for detecting the charge in said inversion capacitor.
Claim 10
Dependent Claim
41 words
A memory as set forth in claim 7 wherein the capacitance of the capacitor formed by said floating plate and said semiconductor substrate is substantially larger than the capacitance of the capacitor formed by said floating plate and said control plate.
Claim 11
Dependent Claim
38 words
A memory as set forth in claim 8 wherein said dual electron injector structure includes first and second silicon-rich silicon dioxide layers and a silicon dioxide insulating layer interposed between said first and second silicon-rich silicon dioxide layers.
Claim 12
Dependent Claim
215 words
An electrically alterable read only memory comprising; an array of memory cells, each of said cells including: a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, and a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, a first word line connected to a first plurality of said cells at the control gate thereof, a second word line connected to a second plurality of said cells at the control gate thereof, a first bit/sense line connected to one of said first plurality of cells and to one of said second plurality of cells at the second conductivity type region thereof, a second bit/sense line connected to another of said first plurality of cells and to another of said second plurality of cells at the second conductivity type region thereof, means for applying control pulses to the control plates of said cells, means for selectively applying pulses to said first and second word lines, means for selectively applying pulses to said first and second bit/sense lines, and sensing means coupled to said first and second bit/sense lines.
Claim 13
Dependent Claim
215 words
An electrically alterable read only memory comprising; an array of memory cells, each of said cells including: a semiconductor substrate of a first conductivity type having a region of a second conductivity type defining one end of a channel region, a control plate, a floating plate disposed between said control plate and said channel region, and a control gate disposed between said floating plate and said second conductivity type region and coupled to said channel region, a first word line connected to a first plurality of said cells at the control gate thereof, a second word line connected to a second plurality of said cells at the control gate thereof, a first bit/sense line connected to one of said first plurality of cells and to one of said second plurality of cells at the second conductivity type region thereof, a second bit/sense line connected to another of said first plurality of cells and to another of said second plurality of cells at the second conductivity type region thereof, means for applying control pulses to the control plates of said cells, means for selectively applying pulses to said first and second word lines, means for selectively applying pulses to said first and second bit/sense lines, and sensing means coupled to said first and second bit/sense lines.
Claim 14
Dependent Claim
35 words
An electrically alterable read only memory as set forth in claim 10 wherein each of the cells of said array further includes an enhanced conduction insulator disposed between said control plate and said floating plate.
Claim 15
Dependent Claim
45 words
An electrically alterable read only memory as set forth in claim 11 wherein the capacitance of the capacitor formed by said floating plate and said control plate is substantially smaller than the capacitance of the capacitor formed by said floating plate and said semiconductor substrate.
Claim 16
Dependent Claim
36 words
An electrically alterable read only memory as set forth in claim 10 wherein each of the cells of said array further includes a dual electron injector structure disposed between said control plate and said floating plate.
Claim 17
Dependent Claim
43 words
An electrically alterable read only memory as set forth in claim 13 wherein each of said dual electron injector structures includes first and second silicon-rich silicon dioxide layers and a silicon dioxide insulating layer interposed between said first and second silicon-rich insulating layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-21 | 1986-08-23 | 1987-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-21 | 1990-08-23 | 1991-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-21 | 1994-08-23 | 1995-02-22 | $7700.00 | Window Closed / Lapsed |