Patent US4420503A successfully refreshed from Google Patents.
US4420503A
Expired / Lapsed
US
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Low temperature elevated pressure glass flow/re-flow process
Assignee: Intersil Corp
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Filing: 1982-05-17
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Granted: 1983-12-13
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Expires: 2002-05-17
Abstract
Abstract A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to achieve proper flow and re-flow characteristics.
Inventors
- 👤 Chung W. Leung
- 👤 Robert H. Dawson
- 👤 Martin A. Blumenfeld
- 👤 Dennis P. Biondi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:01
CPC Classifications
H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
75 words
A process for forming tapered apertures in a glass layer of a semiconductor device comprising the steps of: forming the glass layer; forming apertures in the glass layer; maintaining the glass layer at an elevated pressure above atmospheric pressure; heating the glass layer at the elevated pressure; and maintaining the heated glass layer at the elevated pressure for a period of time sufficient to only soften the layer and taper the edges of the apertures.
Claim 2
Dependent Claim
75 words
A process for forming tapered apertures in a glass layer of a semiconductor device comprising the steps of: forming the glass layer; forming apertures in the glass layer; maintaining the glass layer at an elevated pressure above atmospheric pressure; heating the glass layer at the elevated pressure; and maintaining the heated glass layer at the elevated pressure for a period of time sufficient to only soften the layer and taper the edges of the apertures.
Claim 3
Dependent Claim
24 words
The process of claim 1, wherein: the glass layer is maintained at a pressure of about 10 atmospheres or greater during the heating step.
Claim 4
Dependent Claim
34 words
The process of claim 2, wherein: the glass layer is a doped glass selected from the group consisting of phosphosilicate glass doped with and a ternary borophosphosilicate glass doped with both B and P.
Claim 5
Dependent Claim
21 words
The process of claim 3, wherein: the doped glass layer is heated to a temperature of about 850° ± 50° C.
Claim 6
Dependent Claim
72 words
The process for flowing a glass layer of a semiconductor device, comprising the steps of: forming the glass layer; maintaining the glass layer at an elevated pressure above atmospheric pressure; heating the glass layer at the elevated pressure; and maintaining the heated glass layer at the elevated pressure for a period of time sufficient to only bring the glass layer to its softening point whereby the glass layer is caused to flow.
Claim 7
Dependent Claim
72 words
The process for flowing a glass layer of a semiconductor device, comprising the steps of: forming the glass layer; maintaining the glass layer at an elevated pressure above atmospheric pressure; heating the glass layer at the elevated pressure; and maintaining the heated glass layer at the elevated pressure for a period of time sufficient to only bring the glass layer to its softening point whereby the glass layer is caused to flow.
Claim 8
Dependent Claim
66 words
The process of claim 5, comprising the further steps of: forming an apertured mask on the surface of the glass layer; etching the exposed portions of the glass layer; maintaining the etched glass layer at the elevated pressure; and heating the glass layer at the elevated pressure for a period of time sufficient to only soften the layer and taper the edges of the etched apertures.
Claim 9
Dependent Claim
24 words
The process of claim 6, wherein: the glass layer is maintained at a pressure of about 10 atmospheres or greater during the heating step.
Claim 10
Dependent Claim
35 words
The process of claim 7, wherein: the glass layer is a doped glass selected from the group consisting of a phosphosilicate glass doped with P and a ternary borophosphosilicate glass doped with B and P.
Claim 11
Dependent Claim
21 words
The process of claim 8, wherein: the doped glass layer is heated to a temperature of about 850° ± 50° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-12 | 1987-06-13 | 1987-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-12 | 1991-06-13 | 1991-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-12 | 1995-06-13 | 1995-12-13 | $7700.00 | Window Closed / Lapsed |