Patent US3306993A successfully refreshed from Google Patents.
Patent US4428810A successfully refreshed from Google Patents.
US4428810A
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Method and apparatus for depositing conducting oxide on a substrate
Assignee: Canadian Patents and Development Ltd
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Filing: 1982-05-12
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Granted: 1984-01-31
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Expires: 2002-05-12
Abstract
Abstract There is described a method and an apparatus for depositing oxide, such as zinc oxide, on a substrate by R.F. magnetron sputtering. The oxide deposit is "switched" from a non-conducting to a highly conducting material by a second discharge caused by a voltage applied to a screen grid immediately in front of the substrate, or is rendered conducting by a heating step.
Inventors
- 👤 James B. Webb
- 👤 Digby F. Williams
- 👤 Margaret A. Buchanan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:30
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402; C; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/086; C23C14/22; C23C14/54; C23C14/541; H01B; H01B1/00; H01B1/06; H01B1/08; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/216; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/154; C03C2218/156
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
76 words
A method for forming on a substrate a conductive oxide film comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) maintaining said substrate at a temperature whereby the conductivity of the oxide is caused to change to a value greater than 50 ohm -1 cm -1 .
Claim 2
Independent Claim
76 words
A method for forming on a substrate a conductive oxide film comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) maintaining said substrate at a temperature whereby the conductivity of the oxide is caused to change to a value greater than 50 ohm -1 cm -1 .
Claim 3
Independent Claim
72 words
A method for forming on a substrate a conductive oxide film comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) heating said substrate to a temperature whereby the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 4
Independent Claim
72 words
A method for forming on a substrate a conductive oxide film comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) heating said substrate to a temperature whereby the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 5
Dependent Claim
18 words
A method according to claim 2 including the step of selecting zinc oxide as said high purity oxide.
Claim 6
Dependent Claim
16 words
A method according to claim 2 including the step of selecting argon as said inert gas.
Claim 7
Dependent Claim
16 words
A method according to claim 3 including the step of selecting argon as said inert gas.
Claim 8
Independent Claim
95 words
A method for forming on a substrate a conductive oxide film having a conductivity greater than 10 2 ohm -1 cm -1 comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) introducing a second discharge during the deposition of oxide so as to switch the conductivity of the film to a highly conductive state with a conductivity greater than 10 2 ohm -1 cm -1 .
Claim 9
Independent Claim
95 words
A method for forming on a substrate a conductive oxide film having a conductivity greater than 10 2 ohm -1 cm -1 comprising: (a) feeding into a magnetron sputtering apparatus a gaseous composition containing a reactive gas of hydrogen and an inert gas, (b) magnetron sputtering a target consisting essentially of high purity oxide in said gaseous composition, and (c) introducing a second discharge during the deposition of oxide so as to switch the conductivity of the film to a highly conductive state with a conductivity greater than 10 2 ohm -1 cm -1 .
Claim 10
Dependent Claim
18 words
A method according to claim 6 including the step of selecting zinc oxide as said high purity oxide.
Claim 11
Dependent Claim
16 words
A method according to claim 6 including the step of selecting argon as said inert gas.
Claim 12
Dependent Claim
16 words
A method according to claim 7 including the step of selecting argon as said inert gas.
Claim 13
Dependent Claim
93 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 50 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas into the apparatus, (c) means for supporting said substrate in position for sputtering, and, (d) means for maintaining the temperature of said substrate such that the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 14
Dependent Claim
93 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 50 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas into the apparatus, (c) means for supporting said substrate in position for sputtering, and, (d) means for maintaining the temperature of said substrate such that the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 15
Dependent Claim
92 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 50 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas into the apparatus, (c) means for supporting said substrate in position for sputtering, and (d) means for heating said substrate to a temperature whereby the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 16
Dependent Claim
92 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 50 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas into the apparatus, (c) means for supporting said substrate in position for sputtering, and (d) means for heating said substrate to a temperature whereby the conductivity of the conductive oxide film is greater than 50 ohm -1 cm -1 .
Claim 17
Dependent Claim
13 words
Apparatus according to claim 11 wherein said high purity oxide is zinc oxide.
Claim 18
Dependent Claim
11 words
Apparatus according to claim 11 wherein said inert gas is argon.
Claim 19
Dependent Claim
11 words
Apparatus according to claim 12 wherein said inert gas is argon.
Claim 20
Dependent Claim
19 words
Apparatus according to claim 11, 12 or 13 wherein said means for supporting said substrate is a carousel holder.
Claim 21
Dependent Claim
116 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 10 2 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting essentially of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas, (c) means for supporting said substrate in position for sputtering, (d) a screen grid mounted in front of said substrate, and (e) means for applying a voltage to said screen grid whereby, in use, the film of oxide being deposited on said substrate changes from a substantially non-conductive to a highly conductive state greater than 10 2 ohm -1 cm -1 .
Claim 22
Dependent Claim
116 words
Apparatus for forming on a substrate a conductive oxide film having a conductivity greater than 10 2 ohm -1 cm -1 comprising: (a) a magnetron sputtering device for sputtering a target consisting essentially of high purity oxide, (b) means for feeding a gaseous composition containing a reactive gas of hydrogen and an inert gas, (c) means for supporting said substrate in position for sputtering, (d) a screen grid mounted in front of said substrate, and (e) means for applying a voltage to said screen grid whereby, in use, the film of oxide being deposited on said substrate changes from a substantially non-conductive to a highly conductive state greater than 10 2 ohm -1 cm -1 .
Claim 23
Dependent Claim
13 words
Apparatus according to claim 16 wherein said high purity oxide is zinc oxide.
Claim 24
Dependent Claim
11 words
Apparatus according to claim 16 wherein said inert gas is argon.
Claim 25
Dependent Claim
11 words
Apparatus according to claim 17 wherein said inert gas is argon.
Claim 26
Dependent Claim
19 words
Apparatus according to claim 16, 17 or 18 wherein said means for supporting said substrate is a carousel holder.
References Cited (Backward Citations)
US3477936A
Cited
US3506556A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-01-30 | 1987-08-01 | 1988-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-01-30 | 1991-08-01 | 1992-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-01-30 | 1995-08-01 | 1996-01-31 | $7700.00 | Window Closed / Lapsed |