US4438448A — Zig-zag V-MOS transistor structure

Claim 1

Independent Claim 130 words

In a V-MOS transistor having source, body and substrate regions, a V-groove configuration comprising: a first set of parallel V-grooves disposed through the source and body regions and into the substrate region; and a second set of parallel V-grooves which are disposed at an intersecting angle with respect to said first set of V-grooves, and are also disposed through said source and body regions and into said substrate region, and are interleaved among said first set of grooves such that one end of each V-groove in said second set is in contact with one end of an adjacent V-groove in said first set and the other end of each said V-groove in said second set is in contact with one end of the other adjacent V-groove in said first set.

Claim 2

Dependent Claim 130 words

In a V-MOS transistor having source, body and substrate regions, a V-groove configuration comprising: a first set of parallel V-grooves disposed through the source and body regions and into the substrate region; and a second set of parallel V-grooves which are disposed at an intersecting angle with respect to said first set of V-grooves, and are also disposed through said source and body regions and into said substrate region, and are interleaved among said first set of grooves such that one end of each V-groove in said second set is in contact with one end of an adjacent V-groove in said first set and the other end of each said V-groove in said second set is in contact with one end of the other adjacent V-groove in said first set.

Claim 3

Dependent Claim 20 words

The configuration according to claim 1 wherein the surface of said source region lies in the (100) silicon crystallographic plane.

Claim 4

Dependent Claim 41 words

The configuration according to claim 1 wherein the first set V-grooves are disposed in the <011> crystallographic direction and the second set of V-grooves are disposed in one of the <012>, the <013>, the <014>, the <015>, or the <016> direction.

Claim 5

Dependent Claim 29 words

The configuration according to claim 1 wherein the first set V-grooves are disposed in the <012> crystallographic direction and the second set V-grooves are disposed in the <013> direction.

Claim 6

Dependent Claim 32 words

The configuration according to claim 1 wherein the width of each V-groove is controlled such that the depth of each V-groove is the same with respect to the different sets of V-grooves.

Claim 7

Dependent Claim 123 words

A V-MOS transistor device comprising: a silicon substrate of one type conductivity; a body region disposed on top of said substrate and having a conductivity type opposite to that of said substrate; a source region of the same type conductivity as said substrate disposed on said body region; a plurality of V-grooves in a zig-zag configuration disposed within said source region and which extend through said source region and said body region and into said substrate; an insulating layer disposed on the surface of the device covering the V-grooved area; a gate metal layer disposed over said insulating layer and; a source contact metal layer disposed on the surface of and in contact with said source region not covered by said insulating layer.

Claim 8

Dependent Claim 123 words

A V-MOS transistor device comprising: a silicon substrate of one type conductivity; a body region disposed on top of said substrate and having a conductivity type opposite to that of said substrate; a source region of the same type conductivity as said substrate disposed on said body region; a plurality of V-grooves in a zig-zag configuration disposed within said source region and which extend through said source region and said body region and into said substrate; an insulating layer disposed on the surface of the device covering the V-grooved area; a gate metal layer disposed over said insulating layer and; a source contact metal layer disposed on the surface of and in contact with said source region not covered by said insulating layer.

Claim 9

Dependent Claim 100 words

the device according to claim 6 wherein said zig-zag configuration comprises: a first set of parallel V-grooves; and a second set of parallel V-grooves which are disposed at an intersecting angle with respect to said first set of V-grooves and are interleaved among said first set of grooves such that one end of each V-groove in said second set is in contact with one end of an adjacent V-groove in said first set and the other end of each said V-groove in said second set is in contact with one end of the other adjacent V-groove in said first set.

Claim 10

Dependent Claim 20 words

The device according to claim 7 wherein the surface of said source region lies in the (100) silicon crystallographic plane.

Claim 11

Dependent Claim 40 words

The device according to claim 7 wherein the first set of V-grooves are disposed in the <011> crystallographic direction and the second set of V-grooves are disposed in the <012>, the <013>, the <014>, the <015>, or the <016> direction.

Claim 12

Dependent Claim 30 words

The device according to claim 7 wherein the first set V-grooves are disposed in the <012> crystallographic direction and the second set of V-grooves are disposed in the <013> direction.

Claim 13

Dependent Claim 24 words

The device according to claim 7 wherein the width of each V-groove is controlled such that the depth of each V-groove is the same.

Claim 14

Dependent Claim 18 words

The device according to claim 6 wherein the source and gate metals are disposed in the ladder configuration.

Claim 15

Dependent Claim 51 words

The device according to claim 12 wherein said ladder configuration comprises: a generally rectangular insulating layer with a rectangular sheet of gate metal disposed thereon, disposed over the entire area defined by the V-grooves; and a strip of source contact metal disposed over the remaining surface area of the source region.

Claim 16

Dependent Claim 19 words

The device according to claim 6 wherein the source contact and gate metals are disposed in the interdigitated configuration.

Claim 17

Dependent Claim 70 words

The device according to claim 14 wherein said interdigitated configuration comprises: an insulating layer with a continuous line of gate metal disposed thereon, disposed substantially only in the V-grooves; and a continuous strip of source contact metal disposed over the remaining surface area of the source region such that portions of said source metal extend into the triangular area between each pair of adjacent V-grooves and thus are interdigitated therewith.

Claim 18

Independent Claim 83 words

A method for fabricating a V-MOS transistor device having a source region in a silicon wafer which is disposed within a body region which, in turn, is disposed on top of a silicon substrate, the improvement comprising; forming a plurality of V-grooves in the source region, wherein said V-grooves are disposed in a zig-zag configuration and extend through said source region and said body region and into said substrate region; and disposing oxide insulation and contact source and gate metals on said wafer.

Claim 19

Independent Claim 83 words

A method for fabricating a V-MOS transistor device having a source region in a silicon wafer which is disposed within a body region which, in turn, is disposed on top of a silicon substrate, the improvement comprising; forming a plurality of V-grooves in the source region, wherein said V-grooves are disposed in a zig-zag configuration and extend through said source region and said body region and into said substrate region; and disposing oxide insulation and contact source and gate metals on said wafer.

Claim 20

Dependent Claim 115 words

The method according to claim 16 wherein said zig-zag configuration comprises: a first set of parallel V-grooves disposed in the surface of a silicon source region; and a second set of parallel V-grooves which are disposed at an intersecting angle with respect to said first set of V-grooves disposed in the surface of said source region interleaved among said first set of grooves such that one end of each V-groove in said second sets is in contact with one end of an adjacent V-groove in said first set and the other end of each said V-groove in said second set is in contact with one end of the other adjacent V-groove in said first set.

Claim 21

Dependent Claim 20 words

The method according to claim 17 wherein the surface of said source region lies in the (100) silicon crystallographic plane.

Claim 22

Dependent Claim 42 words

The method according to claim 17 wherein the first set of V-grooves are disposed in the <011> crystallographic direction and the second set of V-grooves are disposed in one of the <012>, the <013>, the <014>, the <015>, or the <016> direction.

Claim 23

Dependent Claim 31 words

The method according to claim 17 wherein the first set of V-grooves are disposed in the <012> crystallographic direction and the second set of V-grooves are disposed in the <013> direction.

Claim 24

Dependent Claim 24 words

The method according to claim 17 wherein the width of each V-groove is controlled such that the depth of each V-groove is the same.

Claim 25

Dependent Claim 27 words

In a V-MOS transistor of the type formed in a semiconductor structure and having vertically layered source, body and drain regions within said body, the improvement comprising:

Claim 26

Dependent Claim 27 words

In a V-MOS transistor of the type formed in a semiconductor structure and having vertically layered source, body and drain regions within said body, the improvement comprising:

Claim 27

Dependent Claim 71 words

a zig-zag shaped V-groove extending downward from a surface of said structure into said drain region, said zig-zag V-groove including a first set of groove segments extending along one crystallographic direction and a second set of grooves segments extending along a second crystallographic direction intersecting said first direction; an insulating layer covering at least said V-groove; and gate metalization disposed atop said insulating layer at least along said zig-zag shaped V-groove.

Claim 28

Dependent Claim 71 words

a zig-zag shaped V-groove extending downward from a surface of said structure into said drain region, said zig-zag V-groove including a first set of groove segments extending along one crystallographic direction and a second set of grooves segments extending along a second crystallographic direction intersecting said first direction; an insulating layer covering at least said V-groove; and gate metalization disposed atop said insulating layer at least along said zig-zag shaped V-groove.

Claim 29

Dependent Claim 30 words

The improvement of claim 22 wherein said insulating layer and said gate metalization additionally are disposed over a substantial portion of the semiconductor structure surface between adjacent zig-zag V-groove segments.

Claim 30

Dependent Claim 46 words

The improvement of claim 22 wherein said gate metalization is substantially limited to coincide with said zig-zag V-groove, and wherein contact metalization for one of said source or drain regions substantially covers the triangular regions on the surface of said structure between adjacent zig-zag V-groove segments.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1987-03-20	1987-09-19	1988-03-20	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1991-03-20	1991-09-19	1992-03-20	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1995-03-20	1995-09-19	1996-03-20	$7700.00	Window Closed / Lapsed

Zig-zag V-MOS transistor structure

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