Patent US4454166A successfully refreshed from Google Patents.
US4454166A
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US
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Process for preparing semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1983-01-03
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Granted: 1984-06-12
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Expires: 2003-01-03
Abstract
Abstract A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.
Inventors
- 👤 Haruhiko Abe
- 👤 Hiroshi Harada
- 👤 Shigeji Kinoshita
- 👤 Yoshihiro Hirata
- 👤 Masahiko Denda
- 👤 Yoichi Akasaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/6536; H10P14/6539
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said electric conductive layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surface of said nitride film to prevent reaction of said nitride film with a second aluminum-containing wiring film to be subsequently applied to the oxygen-containing layer; and forming a second aluminum-containing film on and in contact with said oxygen-containing layer, said oxygen-containing layer preventing short-circuiting of the first and second aluminum-containing wiring layers through the nitride film.
Claim 2
Dependent Claim
100 words
A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said electric conductive layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surface of said nitride film to prevent reaction of said nitride film with a second aluminum-containing wiring film to be subsequently applied to the oxygen-containing layer; and forming a second aluminum-containing film on and in contact with said oxygen-containing layer, said oxygen-containing layer preventing short-circuiting of the first and second aluminum-containing wiring layers through the nitride film.
Claim 3
Dependent Claim
19 words
The process for preparing a semiconductor device according to claim 1 wherein said aluminum-containing film is made of aluminum.
Claim 4
Dependent Claim
21 words
The process for preparing a semiconductor device according to claim 1 wherein said oxygen-containing film is formed by doping oxygen ion.
Claim 5
Dependent Claim
146 words
A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said first aluminum-containing wiring layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surface of said nitride film to prevent reaction of said nitride film with a second aluminum-containing wiring film to be subsequently applied to the oxygen-containing layer; exposing a part of said first aluminum-containing wiring layer beneath said nitride film and said oxygen-containing layer, said oxygen-containing layer continuing to cover the entire nitride film remaining after exposing said part of said electric conductive film; and forming a second aluminum-containing wiring layer on and in contact with said residual oxygen-containing layer and said exposed electric conductive film, said oxygen-containing layer preventing short-circuiting of the first and second aluminum-containing wiring layers through the nitride film.
Claim 6
Dependent Claim
146 words
A process for preparing a semiconductor device, comprising: forming a first aluminum-containing wiring layer on a main surface of a semiconductor substrate; forming a nitride film on said first aluminum-containing wiring layer by a chemical vapor deposition; forming an oxygen-containing layer on the entire surface of said nitride film to prevent reaction of said nitride film with a second aluminum-containing wiring film to be subsequently applied to the oxygen-containing layer; exposing a part of said first aluminum-containing wiring layer beneath said nitride film and said oxygen-containing layer, said oxygen-containing layer continuing to cover the entire nitride film remaining after exposing said part of said electric conductive film; and forming a second aluminum-containing wiring layer on and in contact with said residual oxygen-containing layer and said exposed electric conductive film, said oxygen-containing layer preventing short-circuiting of the first and second aluminum-containing wiring layers through the nitride film.
Claim 7
Dependent Claim
19 words
The process for preparing a semiconductor device according to claim 4 wherein said aluminum-containing film is made of aluminum.
Claim 8
Dependent Claim
21 words
The process for preparing a semiconductor device according to claim 4 wherein said oxygen-containing film is formed by doping oxygen ion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-12 | 1987-12-12 | 1988-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-12 | 1991-12-12 | 1992-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-12 | 1995-12-12 | 1996-06-12 | $7700.00 | Window Closed / Lapsed |