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US4459684A
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Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval
Assignee: Texas Instruments Inc
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Filing: 1981-06-02
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Granted: 1984-07-10
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Expires: 2001-06-02
Abstract
Abstract Non-volatile JRAM cell having interelectrode non-volatile capacitance which is readable and varies with the electrical charge on elements of the device. To program the nonvolatile capacitance, the address lines (word line and bit line) are biased so that a charge is given to the nonvolatile multidielectric stack between the MIS gate and the JFET source of the cell. For a charge of one polarity, an inversion layer of electrons (for a P-type substrate) is formed on the surface of the JFET source, increasing the capacitance between the MIS gate electrode and the JFET gate electrode. For the opposite polarity, an accumulation layer forms at the JFET source surface, decreasing the interelectrode capacitance. The cell is read by presetting one address line, floating that line, then putting a pulse on the other line while reading the voltage output on the floating line.
Inventors
- 👤 Richard A. Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/83; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/39; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; H10D84/00; H10D84/80; H10D84/811; H10D84/813; H10D84/82
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
149 words
A non-volatile data storage cell comprising: a semiconductor substrate of a first conductivity type; a gate region, of a second conductivity type opposite to said first conductivity type, located at the surface of said substrate and extending through said cell; a first-conductivity-type region of said substrate extending up through said gate region to define a source region, surrounded by the surface of said gate region, at the surface of said substrate; an insulating layer covering said source region and said gate region; a multi-layer dielectric structure overlying said source region and recessed into said insulating layer such that a reduced thickness of said insulating layer is present between said dielectric structure and said source region than is present in other parts of said cell; and a conductive strip disposed on the surface of said insulating layer in contact with said multilayer dielectric structure and transverse to said source region.
Claim 2
Dependent Claim
149 words
A non-volatile data storage cell comprising: a semiconductor substrate of a first conductivity type; a gate region, of a second conductivity type opposite to said first conductivity type, located at the surface of said substrate and extending through said cell; a first-conductivity-type region of said substrate extending up through said gate region to define a source region, surrounded by the surface of said gate region, at the surface of said substrate; an insulating layer covering said source region and said gate region; a multi-layer dielectric structure overlying said source region and recessed into said insulating layer such that a reduced thickness of said insulating layer is present between said dielectric structure and said source region than is present in other parts of said cell; and a conductive strip disposed on the surface of said insulating layer in contact with said multilayer dielectric structure and transverse to said source region.
Claim 3
Dependent Claim
23 words
A data storage cell as in claim 1, wherein said substrate is of P+ conductivity type, and said gate region is N+ type.
Claim 4
Dependent Claim
51 words
A data storage cell as in claim 2, wherein said multilayer dielectric structure comprises: a layer of silicon nitride upon said insulating layer and overlying said source region of said substrate; a layer of silicon dioxide upon said nitride layer; and a layer of titanium dioxide upon said silicon dioxide layer.
Claim 5
Dependent Claim
41 words
A data storage cell as in claim 2, wherein said multi-layer dielectric structure comprises: a layer of silicon nitride upon said insulating layer and overlying said source region of said substrate; and a layer of silicon dioxide upon said nitride layer.
Claim 6
Dependent Claim
79 words
The nonvolatile data storage cell of claim 1, further comprising means for programming said cell, selectively, either by applying a positive bias to said gate region, thereby creating an inversion layer at the surface of said source region and increasing interelectrode capacitance of the cell, or by applying a positive bias on the line which addresses said conductive strip thereby creating an accumulation layer at the surface of said source region and lowering said interelectrode capacitance of said cell.
Claim 7
Dependent Claim
34 words
An array of nonvolatile data storage cells as in claim 1, wherein respective ones of said conductive strips are coupled to sense latch circuits for detection of cell output voltage in a read operation.
Claim 8
Dependent Claim
41 words
An array as in claim 6, wherein each said conductive strip further comprises a MOSFET device in series between each said conductive strip and each said corresponding sense latch for selected isolation of said conductive strip from sense latch output voltage.
Claim 9
Dependent Claim
76 words
A method of reading data stored in an array as in claim 7, comprising the steps of: (a) presetting a selected one of said conductive strips to a predetermined voltage; (b) floating said selected one of said conductive strips; (c) applying a positive-going or negative-going pulse to a selected one of said gate regions; (d) detecting a selected cell output voltage signal on said selected conductive strip, simultaneously with application of said positive-going or negative-going pulse.
Claim 10
Dependent Claim
48 words
An array as in claim 6, wherein said sense latch circuits further comprise means for providing a latched output voltages to said gate regions and conductive strips of respective selected cells thereby providing enhancement of the programmed state of the cell which provided input to said sense latch.
Claim 11
Dependent Claim
34 words
An array of nonvolatile data storage cells as in claim 1, wherein respective ones of said gate region are coupled to sense latch circuits for detection of cell output voltage in a read operation.
Claim 12
Dependent Claim
41 words
An array as in claim 10, wherein each said gate region further comprises a MOSFET device in series between each said gate region and each said corresponding sense latch for selected isolation of said gate region from sense latch output voltage.
Claim 13
Dependent Claim
48 words
An array as in claim 10, wherein said sense latch circuits further comprise means for providing a latched output voltage to said gate regions and conductive strips of respective selected cells, thereby providing enhancement of the programmed state of the cell which provided input to said sense latch.
Claim 14
Dependent Claim
76 words
A method of reading data stored in an array as in claim 10, comprising the steps of: (a) presetting a selected one of said gate region to a predetermined voltage; (b) floating said selected one of said gate region; (c) applying a positive-going or negative-going pulse to selected one of said conductive strips; (d) detecting a selected cell output voltage signal on said selected gate region strip, simultaneously with application of said positive-going or negative-going pulse.
References Cited (Backward Citations)
US4127900A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-10 | 1988-01-09 | 1988-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-10 | 1992-01-09 | 1992-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-10 | 1996-01-09 | 1996-07-10 | $7700.00 | Window Closed / Lapsed |