US4464646A — Controlled temperature coefficient thin-film circ…

Claim 1

Independent Claim 147 words

Thin-film circuit element with controlled temperature coefficient of resistance having a substrate (9); at least two distinct thin-film resistance layers (10, 11, 15), each of which comprises a metal which can be etched, applied to the substrate wherein, in accordance with the invention, the respective thin-film resistance layers (10, 11, 15, 25, 26) comprise a continuous layer of tantalum on the substrate; and a thin-film layer of nickel located over a portion of said layer of tantalum, to form a tantalum-nickel resistance layer providing a temperature-dependent resistor (R TaNi ), (10, 26), and a tantalum-only resistance layer providing an essentially temperature-independent resistor (R Ta ), (11, 15; 25), and wherein the respective thin-film resistors have individually different temperature coefficients of resistance (R TaNi ; R Ta ) to provide said circuit element with a temperature coefficient of resistance (RTC) which is controlled to have a predetermined value.

Claim 2

Dependent Claim 147 words

Thin-film circuit element with controlled temperature coefficient of resistance having a substrate (9); at least two distinct thin-film resistance layers (10, 11, 15), each of which comprises a metal which can be etched, applied to the substrate wherein, in accordance with the invention, the respective thin-film resistance layers (10, 11, 15, 25, 26) comprise a continuous layer of tantalum on the substrate; and a thin-film layer of nickel located over a portion of said layer of tantalum, to form a tantalum-nickel resistance layer providing a temperature-dependent resistor (R TaNi ), (10, 26), and a tantalum-only resistance layer providing an essentially temperature-independent resistor (R Ta ), (11, 15; 25), and wherein the respective thin-film resistors have individually different temperature coefficients of resistance (R TaNi ; R Ta ) to provide said circuit element with a temperature coefficient of resistance (RTC) which is controlled to have a predetermined value.

Claim 3

Dependent Claim 56 words

Element according to claim 1, wherein said temperature-dependent resistance layer (R TaNi ) and said temperature-independent resistance layer (R Ta ) form an electrically connected resistance network, the temperature coefficient of resistance of the overall network being variable within the limits of the respective temperature coefficient of resistance of the respective temperature-dependent and temperature-independent resistance layer.

Claim 4

Dependent Claim 53 words

Element according to claim 1, wherein the nickel-tantalum layer (R TaNi ) is selected to have a temperature coefficient of resistance at the lower portion of the range of temperature coefficients of resistance of any tantalum-nickel layer; and wherein said temperature-independent resistance layer (R Ta ) is electrically interconnected with said tantalum-nickel layer.

Claim 5

Dependent Claim 16 words

Element according to claim 3, wherein (FIGS. 1, 4) said electrical interconnection forms a series circuit.

Claim 6

Dependent Claim 15 words

Element according to claim 1, wherein (FIG. 2) said electrical interconnection forms a parallel circuit.

Claim 7

Dependent Claim 41 words

Element according to claim 3, wherein (FIG. 3) two portions of tantalum-only resistance layers (R Ta ) forming two essentially temperature-independent resistors (11, 15) are provided, and said electrical interconnection forms a series-parallel circuit with said temperature-dependent layer (R TaNi ).

Claim 8

Dependent Claim 36 words

Element according to claim 1, wherein (FIGS. 1-3) said element comprises a temperature sensor; and said thin-film resistance layers (10, 11) include multiple partially superimposed layer coatings placed on said substrate and formed by selective etching.

Claim 9

Dependent Claim 242 words

The combination of a thin-film resistance circuit element with controlled temperature coefficient of resistance having a substrate (9); at least two distinct thin-film resistance layers (10, 11, 15), each of which comprises a metal which can be etched, applied to the substrate wherein the respective thin-film resistance layers (10, 11, 15, 25, 26) comprise a continuous layer of tantalum on the substrate; and a thin-film layer of nickel located over a portion of said layer of tantalum, to form a tantalum-nickel resistance layer providing a temperature-dependent resistor (R TaNi ), (10, 26), and a tantalum-only resistance layer providing an essentially temperature-independent resistor (R Ta ), (11, 15; 25), and wherein the respective thin-film resistors have individually different temperature coefficients of resistance (R TaNi ; R Ta ) to provide said resistance circuit element with a temperature coefficient of resistance (RTC) which is controlled to have a predetermined value, with a reactance circuit element (CL) to form an oscillator circuit with the resistance circuit element, wherein circuit means (27) are provided connecting the resistance circuit element to the reactance circuit element to form therewith a combined resistance-reactance circuit connected to provide said oscillator (40); and wherein the controlled temperature coefficient of resistance of said resistance element is controlled to compensate the temperature coefficient of operation of at least said reactance element (CL); and said substrate is common to said resistance element and said reactance circuit element (CL) and supports said reactance circuit element.

Claim 10

Dependent Claim 242 words

The combination of a thin-film resistance circuit element with controlled temperature coefficient of resistance having a substrate (9); at least two distinct thin-film resistance layers (10, 11, 15), each of which comprises a metal which can be etched, applied to the substrate wherein the respective thin-film resistance layers (10, 11, 15, 25, 26) comprise a continuous layer of tantalum on the substrate; and a thin-film layer of nickel located over a portion of said layer of tantalum, to form a tantalum-nickel resistance layer providing a temperature-dependent resistor (R TaNi ), (10, 26), and a tantalum-only resistance layer providing an essentially temperature-independent resistor (R Ta ), (11, 15; 25), and wherein the respective thin-film resistors have individually different temperature coefficients of resistance (R TaNi ; R Ta ) to provide said resistance circuit element with a temperature coefficient of resistance (RTC) which is controlled to have a predetermined value, with a reactance circuit element (CL) to form an oscillator circuit with the resistance circuit element, wherein circuit means (27) are provided connecting the resistance circuit element to the reactance circuit element to form therewith a combined resistance-reactance circuit connected to provide said oscillator (40); and wherein the controlled temperature coefficient of resistance of said resistance element is controlled to compensate the temperature coefficient of operation of at least said reactance element (CL); and said substrate is common to said resistance element and said reactance circuit element (CL) and supports said reactance circuit element.

Claim 11

Dependent Claim 44 words

The combination according to claim 8, wherein the temperature coefficient of said resistance element is controlled to compensate for the temperature coefficient of operation of said reactance element (CL) and circuit components connected thereto and at least forming part of said oscillator circuit (40).

Claim 12

Dependent Claim 41 words

The combination according to claim 8, wherein the temperature coefficient of resistance of said respective thin-film resistance layers (10, 11, 15; 26, 25) is controlled to be opposite the temperature coefficient (TCC, TCL) of operation of the reactance element (C, L).

Claim 13

Dependent Claim 43 words

The combination according to claim 8, wherein said reactance element is a capacitor (C), and the temperature coefficient of resistance of said layers (10, 11, 15; 26, 25) is essentially equal and opposite the temperature coefficient of capacity (TCC) of the capacitor (C).

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1987-08-07	1988-02-06	1988-08-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1991-08-07	1992-02-06	1992-08-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1995-08-07	1996-02-06	1996-08-07	$7700.00	Window Closed / Lapsed

Controlled temperature coefficient thin-film circuit element

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