US4464701A
Expired / Lapsed
US
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Process for making high dielectric constant nitride based materials and devices using the same
Assignee: International Business Machines Corp
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Filing: 1983-08-29
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Granted: 1984-08-07
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Expires: 2003-08-29
Abstract
Abstract An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600° C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.
Inventors
- 👤 Stanley Roberts
- 👤 James G. Ryan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:07
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/20
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
49 words
A process for making a dielectric material comprising the steps of: providing a layer of a mixture of a transition metal nitride and silicon nitride; and oxidizing said layer so as to convert at least a portion of said transition metal nitride into an oxide of said transition metal.
Claim 2
Dependent Claim
49 words
A process for making a dielectric material comprising the steps of: providing a layer of a mixture of a transition metal nitride and silicon nitride; and oxidizing said layer so as to convert at least a portion of said transition metal nitride into an oxide of said transition metal.
Claim 3
Dependent Claim
32 words
A process as set forth in claim 1 wherein the content of said transition metal nitride in said layer prior to said oxidizing step is between 25% and 55% by atomic volume.
Claim 4
Dependent Claim
25 words
A process as set forth in claim 2 wherein said layer is formed by reactively sputtered mixtures of a transition metal nitride and silicon nitride.
Claim 5
Dependent Claim
26 words
A process as set forth in claim 2 wherein said layer is formed by reactively evaporating on a substrate a transition metal nitride and silicon nitride.
Claim 6
Dependent Claim
27 words
A process as set forth on claim 2 wherein said layer is formed by the chemical vapor deposition from a transition metal containing compound, silane and ammonia.
Claim 7
Dependent Claim
20 words
A process as set forth in claim 2 wherein said layer is oxidized at a temperature higher than 600° C.
Claim 8
Dependent Claim
19 words
A process as set forth in claim 2 wherein said mixture has a thickness between 3 and 50 nanometers.
Claim 9
Dependent Claim
27 words
A process as set forth in claim 1 wherein said transition metal nitride is oxidized until all of it is converted into its corresponding transition metal oxide.
Claim 10
Dependent Claim
18 words
A process as set forth in claim 1 wherein said transition metal nitride is oxidized in dry oxygen.
Claim 11
Dependent Claim
26 words
A process as set forth in claim 1 wherein said transition metal is selected from the group consisting of hafnium, tantalum, zirconium, titanium, yttrium, and lanthanum.
Claim 12
Dependent Claim
16 words
A process as set forth in claim 1 wherein said layer is deposited on a substrate.
Claim 13
Dependent Claim
26 words
A process as set forth in claim 11 wherein said substrate is an electrically conductive substrate and further including depositing a conductive material on said layer.
Claim 14
Dependent Claim
65 words
A process for making a dielectric material which includes oxidizing a mixture of a transition metal nitride and silicon nitride until all of the transition metal nitride is converted into an oxide, said transition metal nitride being between 25% and 55% of said mixture by atomic volume and said transition metal being selected from the group consisting of hafnium, tantalum, zirconium, titanium, yttrium, and lanthanum.
Claim 15
Dependent Claim
65 words
A process for making a dielectric material which includes oxidizing a mixture of a transition metal nitride and silicon nitride until all of the transition metal nitride is converted into an oxide, said transition metal nitride being between 25% and 55% of said mixture by atomic volume and said transition metal being selected from the group consisting of hafnium, tantalum, zirconium, titanium, yttrium, and lanthanum.
Claim 16
Dependent Claim
64 words
A process for making a dielectric structure comprising: forming a layer of silicon dioxide on a surface of a semiconductor substrate; forming a layer of a mixture of a transition metal nitride and silicon nitride on said layer of silicon dioxide; oxidizing said structure so as to convert at least a portion of said transition metal nitride into an oxide of said transition metal.
Claim 17
Dependent Claim
64 words
A process for making a dielectric structure comprising: forming a layer of silicon dioxide on a surface of a semiconductor substrate; forming a layer of a mixture of a transition metal nitride and silicon nitride on said layer of silicon dioxide; oxidizing said structure so as to convert at least a portion of said transition metal nitride into an oxide of said transition metal.
Claim 18
Dependent Claim
15 words
A process as set forth in claim 14 wherein said mixture is a homogeneous mixture.
Claim 19
Dependent Claim
28 words
A process as set forth in claim 14 wherein said structure is oxidized until all of its transition metal nitride is converted into its corresponding transition metal oxide.
Claim 20
Dependent Claim
27 words
A process as set forth in claim 14 wherein the percentage of said transition metal in said mixture is from about 25% to 55% by atomic volume.
Claim 21
Dependent Claim
21 words
A process as set forth in claim 14 wherein said structure is oxidized at a temperature of 600° C. or higher.
Claim 22
Dependent Claim
22 words
A process as set forth in claim 14 wherein said layer of silicon dioxide has a thickness between 3 and 10 nanometers.
Claim 23
Dependent Claim
30 words
A process as set forth in claim 14 wherein said layer of a mixture of a transition metal nitride and silicon nitride has a thickness between 5 and 50 nanometers.
Claim 24
Dependent Claim
29 words
A process as set forth in claim 14 which further includes forming an additional layer of a dielectric material on said layer of said mixture after said oxidizing step.
Claim 25
Dependent Claim
18 words
A process as set forth in claim 21 wherein said material in said additional layer is silicon nitride.
Claim 26
Dependent Claim
19 words
A process as set forth in claim 14 wherein said dielectric structure is formed on a electrically conductive substrate.
Claim 27
Dependent Claim
31 words
A process as set forth in claim 23 which further includes forming a conducting layer on said mixture following said step of oxidizing said structure so as to form a capacitor.
Claim 28
Dependent Claim
57 words
A capacitor structure formed by a process comprising: forming a mixture of a transition metal nitride and silicon nitride on a surface of a first conductive layer; oxidizing said mixture to convert at least a portion of said transition metal nitride into an oxide of said transition metal; and forming a second conductive layer on said mixture.
Claim 29
Dependent Claim
57 words
A capacitor structure formed by a process comprising: forming a mixture of a transition metal nitride and silicon nitride on a surface of a first conductive layer; oxidizing said mixture to convert at least a portion of said transition metal nitride into an oxide of said transition metal; and forming a second conductive layer on said mixture.
Claim 30
Dependent Claim
25 words
A capacitor structure as set forth in claim 25 which further includes a layer of silicon dioxide between said mixture and said first conductive layer.
Claim 31
Dependent Claim
24 words
A capacitor as set forth in claim 26 which further includes a layer of silicon nitride between said mixture and said second conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |