Process using plasma for forming conductive through-holes through a dielectric layer

Claim 2

A process for making an electrically conducting path in a dielectric layer sandwiched between two conductive layers comprising (a) forming a hole completely through one of the conductive layers without substantially removing material from the dielectric layer; (b) through said hole plasma etching the dielectric layer whereby a pathway is formed completely through the dielectric layer between the conductive layers and whereby the conductive layer is undercut of dielectric material adjacent to the hole in said conductive layer; (c) deforming the conductive layer which has been undercut toward the other conductive layer, and (d) forming an electrical conducting path between the two conductive layers through the pathway.

Claim 3

The process of claim 1 where a hole is formed only in one conductive layer in step (a).

Claim 4

The process of claim 2 wherein the conductive layer which does not have a hole formed therein in step (a) has a thickness not greater than 3.0 mils.

Claim 5

The process of claim 2 wherein the conductive layer is copper.

Claim 6

The process of claim 1 wherein holes are formed in the conductive layers on opposite sides of the polymeric dielectric layer in step (a) and the dielectric layer is plasma etched through the opposite holes in the conductive layers in step (b). and both conductive layers are deformed toward each other in step (c).

Claim 7

The process of claim 1 wherein the electrical connection in step (d) is formed by contact of the two conductive layers.

Claim 8

The process of claim 1 wherein the formation of the electrical connection includes application of an electrically conductive material to the conductive layer in the pathway.

Claim 9

The process of claim 1 wherein a plurality of holes are simultaneously formed in step (a) and a plurality of pathways are simultaneously formed in step (b).

Claim 10

The process of claim 1 wherein the dielectric layer has a thickness of at least one mil.

Claim 11

The process of claim 1 wherein steps (c) and (d) are performed substantially simultaneously.

Claim 12

The process of claim 1 wherein after step (d) a new dielectric layer and a new conductive layer are applied to one of the conductive layers with the new dielectric layer sandwiched between two conductive layers followed by the step of (a) forming a hole completely through the new conductive layer without substantially removing material from the new dielectric layer; (b) through said hole plasma etching the new dielectric layer whereby a pathway is formed completely through the new dielectric layer between the conductive layers and whereby the new conductive layer is undercut of dielectric material adjacent to the hole in said new conductive layer; (c) deforming the new conductive layer which has been undercut toward the other conductive layer, and (d) forming an electrical conducting path between the two conductive layers through the pathway.

Claim 13

A process for making an electrical conducting path through a dielectric layer sandwiched between two copper conductive layers comprising: (a) forming a hole completely through one copper conductive layer by chemical etching without substantially removing material from the dielectric layer or the second copper layer; (b) plasma etching the polymeric dielectric layer through said hole whereby a pathway is formed completely through the dielectric layer whereby one copper layer is undercut of dielectric material adjacent the hole in the copper layers; (c) deforming the undercut copper layer toward the second copper layer; and (d) forming an electrical connection between the two copper layers through the pathway.

Claim 14

A process for making an electrical conducting path through a dielectric layer sandwiched between two copper conductive layers comprising: (a) forming a hole completely through one copper conductive layer by chemical etching without substantially removing material from the dielectric layer or the second copper layer; (b) plasma etching the polymeric dielectric layer through said hole whereby a pathway is formed completely through the dielectric layer whereby one copper layer is undercut of dielectric material adjacent the hole in the copper layers; (c) deforming the undercut copper layer toward the second copper layer; and (d) forming an electrical connection between the two copper layers through the pathway.