Patent US4488060A successfully refreshed from Google Patents.
US4488060A
Expired / Lapsed
US
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High voltage ramp rate control systems
Assignee: Xicor LLC
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Filing: 1982-05-27
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Granted: 1984-12-11
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Expires: 2002-05-27
Abstract
Abstract Integrated circuit high voltage ramp rate control methods and devices which provide a controllable ramp rate action. The systems are particularly useful for "on-chip" EEPROM high voltage power supplies.
Inventors
- 👤 Richard T. Simko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:04
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/08; G11C16/10; G11C16/12; G11C16/30; G11C5/00; G11C5/14; G11C5/145; G11C5/147; H; H03; H03K; H03K4/00; H03K4/02; H03K4/023; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10B; H10B69/00
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
114 words
An integrated circuit for controlling the ramp rate of a high voltage generator comprising high potential input means for making electrical connection with said high voltage generator; grounding means for making electrical connection with a reference potential current sink; a control potential node; ramp rate current control means responsive to a control potential at said control potential node for regulating the flow of current between the high potential input means and the grounding means; capacitive coupling means for capacitively coupling said control potential node to the high potential input means; a reference potential node; and control potential node discharge means for controlling current flow between the control potential node and the reference potential node.
Claim 2
Dependent Claim
114 words
An integrated circuit for controlling the ramp rate of a high voltage generator comprising high potential input means for making electrical connection with said high voltage generator; grounding means for making electrical connection with a reference potential current sink; a control potential node; ramp rate current control means responsive to a control potential at said control potential node for regulating the flow of current between the high potential input means and the grounding means; capacitive coupling means for capacitively coupling said control potential node to the high potential input means; a reference potential node; and control potential node discharge means for controlling current flow between the control potential node and the reference potential node.
Claim 3
Dependent Claim
60 words
An integrated circuit high voltage ramp rate control circuit in accordance with claim 1 wherein the ramp rate current control means comprises an MOS transistor including a gate, a source and a drain, said control potential node being coupled to said gate, such that the conductivity of said transistor is regulated by the control potential of said control potential node.
Claim 4
Dependent Claim
40 words
An integrated circuit high voltage ramp rate control circuit in accordance with claim 2 wherein the conductivity of said MOS transistor may range from about one nanoampere in an off state to about 100 microamperes in a saturated current state.
Claim 5
Dependent Claim
102 words
An integrated circuit high voltage ramp rate control circuit in accordance with claim 2 wherein said capacitive coupling means comprises one or more integrated circuit capacitors having a capacitance in the range of from about 0.02 to about 10 picofarads, and wherein said control node discharge means comprises at least one MOS transistor together with bias current control means for regulating the conduction of said discharge transistor to a current value in the range of from about 1 nanoampere to about 200 nanoamperes to provide a regulated ramp rate in the range of from about 5 to about 100 volts per millisecond.
Claim 6
Dependent Claim
50 words
Integrated circuit high voltage ramp rate control circuitry in accordance with claim 4 wherein said bias current control means comprises a MOS depletion pullup transistor and an enhancement MOS pulldown transistor having a gate conductance threshold value substantially the same as the gate conductance threshold of said discharge means transistor.
Claim 7
Dependent Claim
34 words
Integrated circuit high voltage ramp rate control circuitry in accordance with claim 5 wherein said bias current control enhancement transistor has a conductivity of approximately 20 times the conductivity of said discharge means transistor.
Claim 8
Dependent Claim
45 words
An integrated circuit high voltage ramp rate control circuit in accordance with claim 1 wherein said high voltage generator generates a high voltage of up to about 50 volts at a limited current output capability in the range of from about 0.1 to 100 microamperes.
Claim 9
Dependent Claim
118 words
An integrated circuit high voltage power supply having a regulated ramp rate comprising integrated circuit generator means for providing a high voltage signal having a maximum potential of at least 10 volts and a current output capacity in the range of from about 0.1 to about 100 microamperes; a MOS enhancement transistor for controlling conduction of the generator output current to a reference potential sink in response to a control node potential applied to the gate thereof; an integrated circuit capacitor for capacitively coupling the generator output potential to the control potential node; and discharge control means for discharging the control potential node at a regulated current rate proportional to the regulated ramp rate of the generator circuit.
Claim 10
Dependent Claim
118 words
An integrated circuit high voltage power supply having a regulated ramp rate comprising integrated circuit generator means for providing a high voltage signal having a maximum potential of at least 10 volts and a current output capacity in the range of from about 0.1 to about 100 microamperes; a MOS enhancement transistor for controlling conduction of the generator output current to a reference potential sink in response to a control node potential applied to the gate thereof; an integrated circuit capacitor for capacitively coupling the generator output potential to the control potential node; and discharge control means for discharging the control potential node at a regulated current rate proportional to the regulated ramp rate of the generator circuit.
Claim 11
Independent Claim
74 words
A method for controlling the ramp rate of a high voltage integrated circuit signal source comprising the steps of capacitively coupling the high voltage signal source potential to a ramp current control node; discharging the control node at a rate proportional to the desired ramp rate; and controlling the conduction of regulating current between the high voltage signal source and a current sink in response to the potential of the ramp current control node.
Claim 12
Independent Claim
74 words
A method for controlling the ramp rate of a high voltage integrated circuit signal source comprising the steps of capacitively coupling the high voltage signal source potential to a ramp current control node; discharging the control node at a rate proportional to the desired ramp rate; and controlling the conduction of regulating current between the high voltage signal source and a current sink in response to the potential of the ramp current control node.
Claim 13
Independent Claim
75 words
A method for controlling the rate of rise in potential of a high voltage-low current charge pump generator comprising the steps of capacitively coupling the increasing potential from said generator to a control node; draining current from said control node at a fixed rate proportional to the desired rate of rise of said generator potential; and controlling the conduction of current between said potential generator and a current sink in response to control node potential.
Claim 14
Independent Claim
75 words
A method for controlling the rate of rise in potential of a high voltage-low current charge pump generator comprising the steps of capacitively coupling the increasing potential from said generator to a control node; draining current from said control node at a fixed rate proportional to the desired rate of rise of said generator potential; and controlling the conduction of current between said potential generator and a current sink in response to control node potential.
Claim 15
Dependent Claim
53 words
The method of claim 10 wherein the step of controlling the current between said potential generator and a current source comprises the steps of coupling the control node potential to the gate of an MOS transistor; and coupling the potential generator and current sink to respective source and drain terminals of said transistor.
Claim 16
Dependent Claim
98 words
An integrated circuit high voltage generating method comprising the steps of initiating the generation of a high voltage signal to provide an output signal of increasing potential; capacitively charging a control node as a function of the output signal; discharging the control node in a regulated manner such that its rate of discharge is a function of the desired ramp rate; and conducting the output signal to a grounding sink as a function of the control node potential such that the output signal does not rise in potential at a rate substantially different from the desired ramp rate.
Claim 17
Dependent Claim
98 words
An integrated circuit high voltage generating method comprising the steps of initiating the generation of a high voltage signal to provide an output signal of increasing potential; capacitively charging a control node as a function of the output signal; discharging the control node in a regulated manner such that its rate of discharge is a function of the desired ramp rate; and conducting the output signal to a grounding sink as a function of the control node potential such that the output signal does not rise in potential at a rate substantially different from the desired ramp rate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-11 | 1988-06-11 | 1988-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-11 | 1992-06-11 | 1992-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-11 | 1996-06-11 | 1996-12-11 | $7700.00 | Window Closed / Lapsed |