III-V Based semiconductor devices and a process for fabrication

Claim 1

A process for producing a device, said device based on a III-V based semiconductor material comprising the steps of depositing said III-V based semiconductor material on a substrate characterized in that (1) a passivating layer is formed on said substrate before said deposition, (2) said passivating layer is removed in the presence of a flux of a volatile group V entity that repairs the surface of said substrate, wherein sufficient repair is essentially completed before said deposition is initiated to yield a surface exhibiting a reflection electron diffraction pattern having essentially continuous streaks, (3) said repair of said substrate is accomplished at a repair temperature above the passivating layer removal temperature and below the incongruent melting temperature of said semiconductor material wherein said flux is adequate to produce a repair of said surface which is sufficient to yield a stripped electron diffraction pattern, and (4) performing said deposition by treating said substrate with a flow containing an entity corresponding to each atom composing said semiconductor material, wherein the total flux of the volatile entities in said flow is in excess to the total flux of the nonvolatile entities in said flow.