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US4496448A
Expired / Lapsed
US
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Method for fabricating devices with DC bias-controlled reactive ion etching
Assignee: Nokia Bell Labs
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Filing: 1983-10-13
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Granted: 1985-01-29
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Expires: 2003-10-13
Abstract
Abstract A method and apparatus for fabricating a device is disclosed, which method involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.
Inventors
- 👤 King L. Tai
- 👤 Frederick Vratny
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:42
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32174; H01J37/32917; H01J37/3299; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341; H01J2237/3343; H01J2237/3345
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
64 words
A method for fabricating a device, comprising the steps of: establishing a plasma in a gaseous atmosphere which contacts a first electrode; establishing a DC bias on said electrode relative to a point of reference potential; and etching a substrate with entities in said plasma characterized in that: said method further comprises the step of discharging said electrode in response to a preselected criterion.
Claim 2
Independent Claim
64 words
A method for fabricating a device, comprising the steps of: establishing a plasma in a gaseous atmosphere which contacts a first electrode; establishing a DC bias on said electrode relative to a point of reference potential; and etching a substrate with entities in said plasma characterized in that: said method further comprises the step of discharging said electrode in response to a preselected criterion.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said discharging occurs in response to a DC bias whose magnitude equals, or exceeds, a preselected value.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said discharging occurs in response to a deviation from a preselected etch profile.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said substrate is mounted on said first electrode.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein said substrate is mounted on a second electrode, said second electrode being spaced from said first electrode and connected to a point of reference potential.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein said discharging occurs automatically in response to a DC bias whose magnitude equals, or exceeds, a preselected value.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said plasma is produced by capacitively coupling AC power into said gaseous atmosphere.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein said plasma is produced by inductively coupling AC power into said gaseous atmosphere.
Claim 10
Dependent Claim
14 words
The method of claim 1 wherein said plasma is produced by a DC discharge.
Claim 11
Dependent Claim
21 words
The method of claim 7 wherein a frequency of said AD power ranges from about 0.01 MHz to about 500 MHz.
Claim 12
Dependent Claim
21 words
The method of claim 8 wherein a frequency of said AC power ranges from about 0.01 MHz to about 500 MHz.
Claim 13
Dependent Claim
25 words
The method of claim 1 wherein said discharging occurs over a period of time less than about one-tenth the total etch time of said substrate.
Claim 14
Dependent Claim
25 words
The method of claim 1 wherein said discharging occurs over a period of time less than about one-hundredth the total etch time of said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-29 | 1988-07-30 | 1989-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-29 | 1992-07-30 | 1993-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-29 | 1996-07-30 | 1997-01-29 | $7700.00 | Window Closed / Lapsed |