Patent US4500615A successfully refreshed from Google Patents.
US4500615A
Expired / Lapsed
US
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Wafer exposure method and apparatus
Assignee: Toshiba Corp
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Filing: 1982-09-22
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Granted: 1985-02-19
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Expires: 2002-09-22
Abstract
Abstract Provided are a wafer exposure method and apparatus wherein a mask of a desired chip pattern is exposed in a reduced scale onto a wafer coated with a resist film, and a number of resist patterns are transferred onto the resist film by the step and repeat method. During the transfer of the resist pattern, the thickness of the resist film is measured, and the exposure is controlled according to the measured thickness of the resist film.
Inventors
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:39
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/7055; G03F7/70558; G03F7/20; G03F7/70425; G03F7/70605; G03F7/70608
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A wafer exposure method comprising the steps of: measuring the thicknesses of a portion of a resist film for each of a plurality of separate and discrete chip forming regions of a wafer; exposing said resist film covering said wafer by a step and repeat method to transfer a pattern to each of the chip forming regions; and controlling the exposure of said chip forming regions on the basis of the measured thickness of said resist film of the chip forming region being exposed during transfer of said pattern.
Claim 2
Dependent Claim
89 words
A wafer exposure method comprising the steps of: measuring the thicknesses of a portion of a resist film for each of a plurality of separate and discrete chip forming regions of a wafer; exposing said resist film covering said wafer by a step and repeat method to transfer a pattern to each of the chip forming regions; and controlling the exposure of said chip forming regions on the basis of the measured thickness of said resist film of the chip forming region being exposed during transfer of said pattern.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein the thickness of said resist film is measured by sensing a phase difference of reflected light when said wafer is irradiated with light.
Claim 4
Dependent Claim
36 words
A method according to claim 1, wherein the exposure of said resist film on said wafer is controlled in accordance with a measured thickness of said resist film and with developing characteristics of said resist film.
Claim 5
Dependent Claim
39 words
A method according to claim 1, wherein the exposure of said resist film on said wafer is performed in accordance with a measured thickness of said resist film and with etching characteristics using said pattern of said resist film.
Claim 6
Dependent Claim
36 words
A method according to claim 1, wherein the exposure is controlled so that a line width of each one of said patterns transferred onto said resist film is equal to a line width of each other.
Claim 7
Dependent Claim
90 words
A wafer exposure apparatus comprising: means for measuring the thicknesses of a portion of a resist film for each of a plurality of separate and discrete chip forming regions of a wafer; means for exposing said resist film covering said wafer by a step and repeat method to transfer a pattern to each of the chip forming regions; and means for controlling the exposure of said chip forming regions on the basis of the measured thickness of said resist film of the chip forming regions during transfer of said pattern.
Claim 8
Dependent Claim
90 words
A wafer exposure apparatus comprising: means for measuring the thicknesses of a portion of a resist film for each of a plurality of separate and discrete chip forming regions of a wafer; means for exposing said resist film covering said wafer by a step and repeat method to transfer a pattern to each of the chip forming regions; and means for controlling the exposure of said chip forming regions on the basis of the measured thickness of said resist film of the chip forming regions during transfer of said pattern.
Claim 9
Dependent Claim
30 words
An apparatus according to claim 6, wherein the thickness of said resist film is measured by sensing a phase difference of reflected light when said wafer is irradiated with light,
Claim 10
Dependent Claim
36 words
An apparatus according to claim 6, wherein the exposure of said resist film on said wafer is controlled in accordance with a measured thickness of said resist film and with developing characteristics of said resist film.
Claim 11
Dependent Claim
39 words
An apparatus according to claim 6, wherein the exposure of said resist film on said wafer is performed in accordance with a measured thickness of said resist film and with etching characteristics of said pattern of said resist film.
Claim 12
Dependent Claim
36 words
An apparatus according to claim 6, wherein the exposure is controlled so that a line width of each one of said patterns transferred onto said resist film is equal to a line width of each other.
Claim 13
Dependent Claim
20 words
A method according to claim 1, wherein the same pattern is transferred to the chip forming regions of the wafer.
Claim 14
Dependent Claim
20 words
An apparatus according to claim 6, wherein the same pattern is transferred onto the chip forming regions of the wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-19 | 1988-08-20 | 1989-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-19 | 1992-08-20 | 1993-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-19 | 1996-08-20 | 1997-02-19 | $7700.00 | Window Closed / Lapsed |