US4514748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Germanium p-i-n photodetector on silicon substrate
Assignee: Nokia Bell Labs
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Filing: 1983-11-21
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Granted: 1985-04-30
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Expires: 2003-11-21
Abstract
Abstract Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.
Inventors
- 👤 John C. Bean
- 👤 Alexander Kastalsky
- 👤 Sergey Luryi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:50
CPC Classifications
H; H10; H10F; H10F55/00; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
83 words
A device comprising (1) a substrate comprising silicon that includes semiconductor devices and (2) a photonic component that produces a current when stimulated by electromagnetic radiation characterized in that said photonic component comprises a germanium based p-i-n diode, including an intrinsic portion, a p-type portion, and an n-type portion, that is electrically and physically connected to said substrate by an intermediary region, said intermediary region limiting the average spacing of the crystal dislocations propagating through said intrinsic portion to greater than 1000 Angstroms.
Claim 2
Independent Claim
83 words
A device comprising (1) a substrate comprising silicon that includes semiconductor devices and (2) a photonic component that produces a current when stimulated by electromagnetic radiation characterized in that said photonic component comprises a germanium based p-i-n diode, including an intrinsic portion, a p-type portion, and an n-type portion, that is electrically and physically connected to said substrate by an intermediary region, said intermediary region limiting the average spacing of the crystal dislocations propagating through said intrinsic portion to greater than 1000 Angstroms.
Claim 3
Dependent Claim
18 words
The device of claim 1 wherein said intermediary region comprises a compositional graded material comprising germanium and silicon.
Claim 4
Dependent Claim
30 words
The device of claim 2 wherein said grading varies from a region consisting essentially of silicon contacting said substrate to a region consisting essentially of germanium contacting said p-i-n diode.
Claim 5
Dependent Claim
19 words
The device of claim 2 wherein said intermediary region and said p-i-n diode are formed by molecular beam epitaxy.
Claim 6
Dependent Claim
19 words
The device of claim 1 wherein said intermediary region and said p-i-n diode are formed by molecular beam epitaxy.
Claim 7
Dependent Claim
22 words
The device of claim 1 wherein the free carrier concentration in said intermediary region is greater than 10 18 cm -3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-29 | 1988-10-29 | 1989-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-29 | 1992-10-29 | 1993-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-29 | 1996-10-29 | 1997-04-30 | $7700.00 | Window Closed / Lapsed |